Low Frequency Noise of GaAs MESFET Degraded in ESD Test

Abstract

GaAs MESFET's were stressed with high voltage pulses of 1 to 3 kV in an ESD experiment. MESFET degradations were studied by I-V and low frequency (LF) noise measurements. We have distinguished two cases: stress in gate and stress in drain. Noise results in the case of gate stress suggest that the LF noise sources are connected with defects near the metal-semiconductor interface.