Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs

Chou, Y.C.; Leung, D.; Grundbacher, R.; Lai, R.; Kan, Q.; Liu, P. H.; Eng, D.; Block, Thomas; Oki, A.K.

doi:10.1016/j.microrel.2005.02.012

Cited by 12 publications

(2 citation statements)

References 41 publications

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“…The probability of significant gate-metal diffusion is minimal in this study, given that the temperature during stress is well below the threshold of ∼200 °C for the onset of this process in GaAs MESFETs and PHEMTs. [19][20][21] The increase in V th suggests the activation of modest densities of acceptor-like defects and/or passivation of donor-like defects via electron capture at positively charged centers under ON-state bias conditions at elevated temperatures. 13 No significant change in peak transconductance G M was observed during the stressing sequence, indicating that the charged defects responsible for the V th shifts evidently are not located close enough to the two-dimensional electron gas (2DEG) to scatter carriers strongly.…”

Section: A Current-voltage Measurementsmentioning

confidence: 99%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.

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Section: A Current-voltage Measurementsmentioning

confidence: 99%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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“…As one of the most popular III-V binary compound semiconductor devices, GaAs monolithic microwave integrated circuits (MMIC) have attracted many attentions with the advantages of high electron mobility, high cutoff frequency, low noise figure, and good output power and performed superior capabilities for commercial, military, and space applications [1][2][3][4][5]. Regarding the stringent requirements from the market, the most distinct change of GaAs MMIC is the shrinkage of the device size.…”

Section: Introductionmentioning

confidence: 99%

The Design and Life Test of a Multifunction Power Amplifier for Space Application

Shang

Wang

et al. 2016

Active and Passive Electronic Components

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A new multifunction power amplifier (MFPA) is designed and fabricated for the application of point-to-point K-Band backhaul TR module. A DC temperature life test was performed to model the up-limit temperature effect of the designed MFPA under space application. After 240 hours of 100°C life test, the test results illustrate that the designed MFPA has only slight power degradation at the saturation region without change of the linear gain. The general performance of the designed MFPA satisfies the requirement of the application scenario.

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Reliability tests on millimetre wave 100 nm gate length process for safe operating area evaluation methodology

Robin,

Delcourt,

Theocharis

et al. 2023

Microelectronics Reliability

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Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs

Cited by 12 publications

References 41 publications

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

The Design and Life Test of a Multifunction Power Amplifier for Space Application

Reliability tests on millimetre wave 100 nm gate length process for safe operating area evaluation methodology

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