Degradation of ITO Film in Glow-Discharge Plasma

Kuboi, Osamu

doi:10.1143/jjap.20.l783

Cited by 40 publications

(8 citation statements)

References 2 publications

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“…This effect increases, and after 10 min tile-like structures have grown to a size of 2 μm (HTPE10), as is shown in Figure d. This formation of surface spheres is similar to what is reported for ITO. , Using EDX we found that the spheres consist of tin; the oxygen concentration in the large spheres on the sample surface was below the detection limit of 1%.…”

Section: Resultssupporting

confidence: 81%

Reduction of Tin Oxide by Hydrogen Radicals

Wallinga¹,

Arnoldbik²,

Vredenberg³

et al. 1998

J. Phys. Chem. B

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The effect of a reducing hydrogen ambient on textured tin oxide thin films on glass substrates has been investigated. Hydrogen treatments were done at 230 and 430 °C by hot wire (HW) and rf plasma-decomposed hydrogen with pure H 2 as source gas. By these treatments the possible reduction of the substrate during the deposition of a-Si:H for solar cells is simulated. Ion beam techniques revealed that the exposure to HWdecomposed H-radicals leads to the formation of a tin-rich surface layer of 40 nm in 1 min at both 230 and at 430 °C. The loss of oxygen is higher for the high-temperature treatment. The optical transmission at a wavelength of 800 nm is reduced from 80% to less than 20%, while the sheet resistance increases from 6 to 8 Ω/0. At both temperatures the reduction of fluorine-doped tin oxide (FTO) by a HW-treatment occurs faster than by rf plasma-decomposed H. The H radical concentration, which is higher for the HW-decomposed hydrogen as compared to rf plasma-decomposed hydrogen, is the most important factor in determining the rate of the reduction process. For short exposures to H radicals, the transparency and conductivity of the tin oxide may be completely restored by means of reoxidation in air at 400 °C. In contrast, prolonged exposure to H-radicals induces irreversible loss of transparency and conductivity, concomitant with formation of granulelike particles of metallic tin on the surface. A thin plasma-deposited a-Si:H-layer was found to effectively protect the FTO-layer against reduction due to HW-generated H-radicals.

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Section: Resultssupporting

confidence: 81%

Reduction of Tin Oxide by Hydrogen Radicals

Wallinga¹,

Arnoldbik²,

Vredenberg³

et al. 1998

J. Phys. Chem. B

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“…The substrate temperature is set to a value above the melting point of indium. In our growth experiments, the substrate temperature was 250 AE 5 C, at which ITO is known to be superficially reduced on the time-scale of minutes, 15 and the RF power density was 64 mW cm À2 . This surface treatment leads to the formation of metallic droplets of indium and tin (Fig.…”

mentioning

confidence: 99%

In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO

Alet

Patriarche

et al. 2008

J. Mater. Chem.

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“…The indium nanoparticles as metal catalysts were fabricated by hydrogen plasma treatment on the Indium Tin Oxide (ITO)-coated substrates [16] and the SiNW growths were performed by PECVD using SiH 4 as the precursor gas and H 2 as the carrier gas. The flexible stainless steel substrates were cleaned sequentially in the baths of acetone, ethanol and deionized water with ultrasonic agitation for 10 min.…”

Section: Methodsmentioning

confidence: 99%