In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO

Abstract

International audienceIn situ generation of indium catalyst droplets and subsequent growth of crystalline silicon nanowires on ITO by plasma-enhanced CVD are reported, and the wurtzite (Si-IV) phase is clearly evidenced in some wire

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

“…During annealing the hydrogen plasma produces hydrogen radicals (H * ) that reduce the gallium oxide of the surface droplet. This reduction activates the catalyst function of the gallium, as previously shown for indium tin oxide [40]. For the synthesis, a silane plasma highly diluted in hydrogen was used.…”

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

“…A group of low melting point metals, including tin (Sn) [22][23][24][25], indium (In) [23,26,27], gallium (Ga) [28] and bismuth (Bi) [29], have been adopted to mediate the VLS growth of SiNWs in a Plasma Enhanced Chemical Vapor Deposition (PECVD) system. In this way, we have demonstrated Sn assisted SiNW growth at a substrate temperature as low as 240 1C [23], with yet a very important bonus that after growing the SiNWs into a desired length, the remnant Sn can be removed by a simple hydrogen (H 2 ) plasma etching without the need of any ex situ cleaning [30].…”

In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD

“…Among all the methods of synthesizing SiNWs by VLS, the route where SiNWs are synthesized in situ after hydrogen plasma treatment on TCO/glass substrates by plasma-enhanced chemical vapor deposition (PECVD) has very great attractiveness for its several advantages: low temperature, large area and no Au contamination. Alet et al [14] and Jeon and Kamisako. [15] have reported some valuable results about this route.…”