Degradation of GaN-based high-power lasers and recent advancements

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

“…The threshold of COMD was determined to be around 40-57MW/cm 2 for InGaN laser diodes. 14,15 These values are an order of magnitude higher than for GaAs counterparts. The mechanism of COMD was (and still is) intensively studied for GaAs based devices but in case of GaN based devices it has not been extensively investigated and has not been confirmed experimentally.…”

Enhanced optical properties of InGaN MQWs with InGaN underlying layers

“…Recently, an operational power as high as 200 mW with a decent level of lifetime was reported [2] and the maximum optical output even reached 300 mW [3]. In the course of enhancing the reliability for high-power BV-LDs, the efficient optical qualities of the InGaN quantum wells (QWs) which constitute the active region of devices should be assured.…”

Analysis of optical loss on blue‐violet laser diodes

“…Even supposing achievement of 120 mW operational power with a decent lifetime [2,3], the higher optical output of BV-LDs is always demanded for multi-layer storages for the high density multimedia applications. Improvements of LD's performance have been continuously reported, but several issues such as high defect density of substrates and p-doping conditions still need to be solved [2,3]. In addition, to achieve high power devices, one can reduce the optical loss and attain the high gain structures of LDs.…”

“…GaN-based blue-violet laser diodes (BV-LDs) have been successfully demonstrated and provided as light sources for optical storage system [1,2]. Even supposing achievement of 120 mW operational power with a decent lifetime [2,3], the higher optical output of BV-LDs is always demanded for multi-layer storages for the high density multimedia applications.…”