Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

Pierścińska, Dorota; Pierściński, Kamil; Płuska, Mariusz; Marona, Ł.; Wiśniewski, P.; Perlin, P.; Bugajski, M.

doi:10.1063/1.4990867

Cited by 7 publications

(5 citation statements)

References 32 publications

(35 reference statements)

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“…1 st -order gratings would be challenging to fabricate at the intended wavelength, as feature sizes of ~40 nm would be required for emission at ~400 nm [33] with etch depths of ~600 nm. Therefore, a 3 rd -order grating was implemented, with feature sizes of ~120 nm, and an 80% duty cycle to achieve coupling strengths comparable to that observed in a 1 st -order grating [39]. The device used was a 3 rd -order grating DFB without facet coatings, with a cavity length of 500 µm, and mounted pside up in a TO5.6 package.…”

Section: Dfb Device Structurementioning

confidence: 99%

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

et al. 2021

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Section: Dfb Device Structurementioning

confidence: 99%

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

et al. 2021

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“…built-in defect. The microscopic investigation of degradation included examination of DL by means of scanning electron microscopy (SEM), as well as destructive focused ion beam (FIB) etching was applied, revealing internal defects formed within the cavity [151].…”

Section: Gan Based Diode Lasersmentioning

confidence: 99%

“…Maximum temperature increases versus pulse width registered for epitaxial layers and GaN substrate. Reproduced from [151]. CC BY 4.0.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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“…Methods for measurements of temperature and other thermal properties of semiconductor lasers include thermoreflectance (TR) [13][14][15][16][17], time-resolved microprobe photoluminescence (PL) [9, [18][19], scanning interferometric thermal mapping technique (SITM) [20] and techniques that use frequency shift of Fabry-Perot (FP) modes [21][22][23][24]. The first two methods use a laser source to measure light reflection intensity or photoluminescence spectrum to measure surface temperature.…”

Section: Introductionmentioning

confidence: 99%

Time resolved Fabry-Perot measurements of cavity temperature in pulsed QCLs

Gündoğdu¹,

Pisheh²,

Demir³

et al. 2018

Opt. Express

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Temperature rise during operation is a central concern of semiconductor lasers and especially difficult to measure during a pulsed operation. We present a technique for in situ time-resolved temperature measurement of quantum cascade lasers operating in a pulsed mode at ~9.25 μm emission wavelength. Using a step-scan approach with 5 ns resolution, we measure the temporal evolution of the spectral density, observing longitudinal Fabry-Perot modes that correspond to different transverse modes. Considering the multiple thin layers that make up the active layer and the associated Kapitza resistance, thermal properties of QCLs are significantly different than bulk-like laser diodes where this approach was successfully used. Compounded by the lattice expansion and refractive index changes due to time-dependent temperature rise, Fabry-Perot modes were observed and analyzed from the time-resolved emission spectra of quantum cascade lasers to deduce the cavity temperature. Temperature rise of a QCL in a pulsed mode operation between -160 °C to -80 °C was measured as a function of time. Using the temporal temperature variations, a thermal model was constructed that led to the extraction of cavity thermal conductivity in agreement with previous results. Critical in maximizing pulsed output power, the effect of the duty cycle on the evolution of laser heating was studied in situ, leading to a heat map to guide the operation of pulsed lasers.

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Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching

Cited by 7 publications

References 32 publications

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Time resolved Fabry-Perot measurements of cavity temperature in pulsed QCLs

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