Degradation mechanisms of InP-based high-electron-mobility transistors under 1 MeV electron irradiation

Abstract

In this paper, InP-based high electron mobility transistors were investigated for an electron fluence of 5 × 1015 cm−2 at 1 MeV. The channel current and transconductance were reduced by 7.8% and 12.6% after electron irradiation. Meanwhile, the ION/IOFF ratio was reduced from 2.47 × 1012 to 2.16 × 102 and the SS was increased from 116.8 m mV dec−1 to 125.9 mV dec−1 after electron irradiation. To understand the degeneration behavior, the carrier concentration and mobility were calculated by the charge control model. Unlike, previous studies on the degradation behavior upon irradiation, the results show that these changes could only be attributed to the reduction of mobility in the channel by the irradiation-induced defects. The AFM and pulsed I–V curves measurement results proved that the Coulomb scatter effect was increased after electron irradiation, which led to decrease the carrier mobility. Besides, the current gain cut-off frequency (f T) was reduced from 139.4 GHz to 125.5 GHz and maximum oscillation frequency (f max) was reduced from 226.2 GHz to 206.1 GHz after electron irradiation. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance and the channel resistance.

Electron radiation impact on the kink effect in S 22 of InP-based high electron mobility transistors

“…Liu et al conducted a systematic study of proton radiation in AlGaN/GaN HEMTs, which indicated that the DC characteristics deteriorate more severely under high-fluence radiation [12]. As for InP-based HEMTs, our preliminary reports demonstrated that the channel current and frequency characteristics declined more and more seriously with the increase of both proton and electron fluence [13,14]. Additionally, the damage mechanism of the gate contact characteristics under electron radiation has been studied [15].…”

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs*

“…Moreover, with radiation damage mechanism studied adequately and the effective anti-radiation hardness proposed, the the InP-based HEMTs' applications in space can be expected in near future. [28]…”

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

“…因此对于空间环境中应用 的HEMT器件, 研究其电子辐照效应显得尤为重要. 近年来, 国外众多研究团队纷纷报道了辐照对 各种HEMT器件的影响, 其中辐照源包括质子、 电子、中子、 g 射线、a 粒子等, HEMT器件主要包 括GaAs HEMT [10] , GaN HEMT [11] , InP HEMT [12] ,…”