Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers

Chen, Wei Ming; Banerjee, Sanjay K.; Lee, Jack C.

doi:10.1063/1.111873

Cited by 29 publications

(8 citation statements)

References 10 publications

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“…This finding cohorts the claim that modifying the Si substrate is effective in tailoring layer inversion. 14 In this paper we have shown that the Ni͑Pt͒Si can be stabilized up to 800°C on RTCVD-Si and the stabilization was attributed to the preponderant role of the change in Gibbs free energy. Layer inversion was retarded due to the larger resultant poly-Si grains upon heat-treatment of the mixed phase films in the presence of Ni͑Pt͒.…”

mentioning

confidence: 81%

Layer Inversion of Ni(Pt)Si on Mixed Phase Si Films

Lee

Pey

Mangelinck³

et al. 2002

Electrochem. Solid-State Lett.

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The formation of Ni silicides has been improved with Ni͑Pt͒-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni͑Pt͒Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni͑Pt͒Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi 2 precipitates as seeds besides the preexisting Si crystallites.

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mentioning

confidence: 81%

Layer Inversion of Ni(Pt)Si on Mixed Phase Si Films

Lee

Pey

Mangelinck³

et al. 2002

Electrochem. Solid-State Lett.

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“…A similar observation for the underlayer morphology was also made in a previous research. 14 The dopants implanted in the poly-Si layer have a great influence on thermal stability property. 15,16 …”

Section: Resultsmentioning

confidence: 99%

Co Si x thermal stability on narrow-width polysilicon resistors

Chen

Wang

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this study, the thermal stability of polysilicon lines with various widths and different dopant types in 90-nm processes is investigated. The thermal behavior of silicides formed on N+ polyresistors and P+ polyresistors is very different. The worst thermal stability is found on the narrower N+ polyresistors, while an abnormal thermal behavior is observed on P+ polyresistors. This anomalous thermal-stability change with different drawn linewidths of P+ polyresistors is related to the grain-size distribution and the actual polyresistor linewidth. Also, it is interesting to find that the voids formed in P+ polyresistors lead to a stepped increase in sheet resistance.

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“…3 It is well known that thermal stability depends on many physical parameters and experimental conditions. 4 Moreover, the interface roughness plays a key role on the thermal stability of thin silicide films and on the electrical properties. 5,6 There are not many reports on the thermal evolution of interface roughness of CoSi 2 /Si͑001͒, though.…”

Section: Real-time X-ray Scattering Study On the Thermal Evolution Ofmentioning

confidence: 99%