Articles you may be interested inDielectric properties and microstructure of nano-MgO dispersed Ba 0.3 Sr 0.7 Ti O 3 thin films prepared by sputter deposition J. Appl. Phys. 98, 014107 (2005); 10.1063/1.1947390Low temperature rf sputtering deposition of (Ba, Sr) Ti O 3 thin film with crystallization enhancement by rf power supplied to the substrate J.
In this study, we examined the microstructure of Ag films grown on Si(001) substrates by radio frequency (rf) magnetron sputtering in a synchrotron x-ray scattering experiment. At a low rf power of 0.22 W/cm2, the film was initially nucleated in the form of fine-grained epitaxial film with the crystalline axes parallel to the substrate crystalline axes. As the growth proceeded further, it changed to nonepitaxial three dimensional island growth. The Ag islands were not epitaxial, but grew preferentially along the 〈111〉 direction. At a higher rf power of 0.44 W/cm2, the Ag film developed a nonepitaxial island growth from the early stage. Annealing the films at 500 °C increased the island size and enhanced the crystalline quality. The thin epitaxial film grown at the low rf power was recrystallized into islands during the annealing. This study suggests that it is feasible to grow heteroepitaxial Ag films on silicon substrates even by a sputtering process when the energy of the sputtered particles is minimized.
Epitaxial (Ba 0.5 Sr 0.5 ) TiO 3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a ס 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in-and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.
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