Crystallization of amorphous (Ba, Sr)TiO3/MgO(001) thin films

Noh, Do Young; Lee, H. H.; Kang, Tae Soo; Je, Jung Ho

doi:10.1063/1.121469

Cited by 21 publications

(13 citation statements)

References 13 publications

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“…This suggests that the BiFeO 3 phase also exists as an intermediate phase like YFeO 3 during the reaction, and the crystallization of garnet phase was through BiFeO 3 and YFeO 3 phases. The higher crystallization temperature than the other CSD method may be explained by the existence of the BiFeO 3 intermediate phase due to the energy barrier of transformation [32]. Therefore, it can be proposed that, in the MOD method, YFeO 3 , Fe 2 O 3 , and BiFeO 3 phases are formed at the low sintering temperature(o800 1C), and at the crystallization temperature($ 900 1C), BiFeO 3 is decomposed and only the garnet phase is formed and crystallized because of the preferred formation of Y 3 Fe 5 O 12 composition in the Y 2 O 3 -Fe 2 O 3 system [28,33].…”

Section: Powder Analysismentioning

confidence: 92%

Preparation of bismuth substituted yttrium iron garnet powder and thin film by the metal-organic decomposition method

Lee

Yoon

Kim

et al. 2011

Journal of Crystal Growth

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Section: Powder Analysismentioning

confidence: 92%

Preparation of bismuth substituted yttrium iron garnet powder and thin film by the metal-organic decomposition method

Lee

Yoon

Kim

et al. 2011

Journal of Crystal Growth

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“…1,2,12,[14][15][16][17][18][19] Nucleation begins within the temperature range of 470-500°C. 1,15 However, films crystallized below 700°C may have a low density due to high porosity and a noticeable dilatation of the lattice.…”

Section: A Mass-density Evolution Of Amorphous Batiomentioning

confidence: 99%

Formation and thermal stability of quasi-amorphous thin films

et al. 2005

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The thermal stability of amorphous ionic solids is usually attributed to kinetic considerations related to mass transport. However, there are a number of amorphous ionic solids, which have recently been described, whose unusual resistance to nucleation and subsequent crystallization cannot be explained by mass transport limitations. Examples have been found in a large variety of fields, spanning the range from thin solid films to biomineralization. This poses a question regarding a possible common mechanism for the stabilization of amorphous ionic solids. Here we present a model which explains the formation and thermal stability of quasi-amorphous thin films of BaTiO 3 , one of the amorphous systems recently described which exhibit unusual thermal stability. On the basis of the experimental evidence presented we suggest that nucleation of the crystalline phase can occur only if the amorphous phase undergoes volume expansion upon heating and transforms into an intermediate low density amorphous phase. If volume expansion is unobstructed by external mechanical constraints, nucleation proceeds freely. However, thin films are clamped by a substrate; therefore, volume expansion is restricted and the low-density intermediate phase is not formed. As a result, under certain conditions, nucleation may be completely suppressed and the phase which appears is quasi-amorphous. A quasi-amorphous film is under compressive stress and as long as the mechanical constraints are in place it remains stable at the temperatures that normally lead to crystallization of amorphous BaTiO 3 . Quasiamorphous thin films of BaTiO 3 exhibit pyroelectricity, the origin of which is also explained by the proposed model.

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“…By using the CCD-camera, we recorded frames with 10 s exposure time each. As reported, 50 when annealing a sputtered layer at the crystallisation temperature, FIG. 10.…”

Section: Selected Resultsmentioning

confidence: 84%

A compact and low-weight sputtering unit for in situ investigations of thin film growth at synchrotron radiation beamlines

Walter

Dippel

Pflaum

et al. 2015

Review of Scientific Instruments

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The influence of the growth rate on the preferred orientation of magnetron-sputtered Ti-Al-N thin films studied by in situ x-ray diffraction J. Appl. Phys. 98, 044901 (2005) In this work, we report on a highly variable, compact, and light high-vacuum sputter deposition unit designed for in situ experiments using synchrotron radiation facilities. The chamber can be mounted at various synchrotron beamlines for scattering experiments in grazing incidence geometry. The sample position and the large exit window allow to perform x-ray experiments up to large q values. The sputtering unit is easy to mount on existing experimental setups and can be remote-controlled.In this paper, we describe in detail the design and the performance of the new sputtering chamber and present the installation of the apparatus at different 3rd generation light sources. Furthermore, we describe the different measurement options and present some selected results. The unit has been successfully commissioned and is now available for users at PETRA III at DESY. C 2015 AIP Publishing LLC.[http://dx

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Crystallization of amorphous (Ba, Sr)TiO3/MgO(001) thin films

Cited by 21 publications

References 13 publications

Preparation of bismuth substituted yttrium iron garnet powder and thin film by the metal-organic decomposition method

Preparation of bismuth substituted yttrium iron garnet powder and thin film by the metal-organic decomposition method

Formation and thermal stability of quasi-amorphous thin films

A compact and low-weight sputtering unit for in situ investigations of thin film growth at synchrotron radiation beamlines

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