Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination

Dong, Lin; Su, Wan-Ching; Chang, Ting‐Chang; Chen, Hong-Chih; Tu, Yu‐Fa; Zhou, Kuan‐Ju; Hung, Yang‐Hao; Yang, Jianwen; Lu, I-Nien; Tsai, Tsung‐Ming; Zhang, Qun

doi:10.1109/ted.2020.3047015

Cited by 9 publications

(5 citation statements)

References 23 publications

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“…In recent investigations of advanced semiconductors, amorphous oxide semiconductors, especially In-Ga-Zn-O (IGZO) ones, have been widely studied in relation to their ability to act as active layer materials for thin-film transistors (TFTs) due to their high field-effect mobility ( μ ), large-area uniformity (>Generation 8; 2200 mm × 2500 mm), low leakage current, low-temperature (<300 °C) fabrication process, and excellent transparency in the visible region [ 1 , 2 , 3 , 4 , 5 , 6 ]. At present, the structure of IGZO TFT can be roughly divided into a bottom gate and a top gate based on the active layer [ 3 , 5 , 6 , 7 ]. For the bottom-gate structure IGZO TFT, highly energetic particles generated in the deposition process used for a semiconductor channel (such as sputtering) are likely to cause damage to the dielectric.…”

Section: Introductionmentioning

confidence: 99%

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Huang,

Peng,

et al. 2024

Micromachines

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In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas. With the increase in the hydrogen-containing materials in the reactive gas, field effect mobility and negative bias illumination stress stability improve nearly twofold. The reasons for these results are explained using technical computer-aided design simulations.

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Section: Introductionmentioning

confidence: 99%

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Huang,

Peng,

et al. 2024

Micromachines

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“…Thin film transistors using transparent amorphous oxide semiconductors such as amorphous indium gallium zinc oxide (a-IGZO) and zinc oxide (ZnO) have drawn great attention as back-plane devices for high-resolution active-matrix flat panel displays [1][2][3]. Since Hosono et al first used a-IGZO as a channel layer in 2004 [4,5], many groups have paid attention to optimization of the channel layer fabrication process [6].…”

Section: Introductionmentioning

confidence: 99%

High Performance of InGaZnO TFTs Using HfxAlyOz Nanolaminates as Gate Insulators Prepared by ALD

Huang

Liu

et al. 2022

Coatings

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In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs, the HfxAlyOz-based IGZO TFTs showed a larger field-effect mobility of 10.31 cm2/Vs and a smaller subthreshold swing of 0.12 V/decade. Moreover, it showed a smaller threshold voltage shift of 0.5 V than that of HfO2-based TFTs under gate-bias stress at +5 V for 900 s due to the smooth surface. Moreover, the high dielectric HfxAlyOz nanolaminate had a larger equivalent SiO2 thinness than that of Al2O3 gate insulators, which are beneficial in applications of high-resolution display. Thus, the high mobility and high stability TFTs could be regarded as good candidates for active-matrix flat panel displays.

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“…It is necessary to predict the circuit operation in alternating current (AC) driving conditions through simulations that reflect analysis results. Until now, there has been much research on direct current (DC) stress [9][10][11][12][13][14][15][16][17], even though most circuits are driven in AC conditions. Hence, it is very important to analyze the instability characteristics of IGZO devices and circuits in various AC conditions so that compact modeling can be drawn for the reliability-aware SPICE (Simulation Program with Integrated Circuit Emphasis) simulation.…”

Section: Introductionmentioning

confidence: 99%

Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

et al. 2021

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Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.

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Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination

Cited by 9 publications

References 23 publications

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

High Performance of InGaZnO TFTs Using HfxAlyOz Nanolaminates as Gate Insulators Prepared by ALD

Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

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