This work presents a strategy of nitrogen anion doping to suppress negative gate-bias illumination instability. The electrical performance and negative gate-bias illumination stability of the ZnSnON thin film transistors (TFTs) are investigated. Compared with ZnSnO-TFT, ZnSnON-TFT has a 53% decrease in the threshold voltage shift under negative bias illumination stress and electrical performance also progresses obviously. The stability improvement of ZnSnON-TFT is attributed to the reduction in ionized oxygen vacancy defects and the photodesorption of oxygen-related molecules. It suggests that anion doping can provide an effective solution to the adverse tradeoff between field effect mobility and negative bias illumination stability.
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