Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Abstract

In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas. With the increase in the hydrogen-containing materials in the reactive gas, field effect mobility and negative bias illumination stress stability improve nearly twofold. The reasons for these results are explained using technical computer-aided design simulations.