Degradation and Regeneration of n
 +-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing

Winter, Michael; Bordihn, S.; Peibst, Robby; Brendel, Rolf; Schmidt, Jan

doi:10.1109/jphotov.2020.2964987

Cited by 18 publications

(11 citation statements)

References 20 publications

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“…[ 23,24 ] In contrast, annealing at 400 °C was found to improve both the passivation and subsequent stability of n‐type wafers with polysilicon/tunnel oxide passivation. [ 14 ] This suggests that the passivation scheme is important for the response to post‐firing annealing. Further work is required to determine what the critical parameters for this process might be.…”

Section: Discussionmentioning

confidence: 99%

“…It has important implications for long‐term stability testing [ 12 ] and can reduce long‐term performance for certain solar cell architectures in the field. [ 13–15 ]…”

Section: Introductionmentioning

confidence: 99%

“…[ 11,16 ] More recently there have been observations of a similar defect in structures using polysilicon/tunnel oxide passivating contacts. [ 13,14 ] The mechanism appears to differ between passivation schemes. Wafers passivated with SiN X :H sees an increase in recombination active defects at or near the surface, with no change in the fixed surface charge.…”

Section: Introductionmentioning

confidence: 99%

“…It has important implications for long-term stability testing [12] and can reduce long-term performance for certain solar cell architectures in the field. [13][14][15] SRD has been observed to affect silicon wafers passivated with plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiN X :H), thin thermal oxides capped with nitride (SiO 2 /SiN X :H), and aluminum oxide (PECVD or atomic layer deposited) capped with silicon nitride (AlO X :H/SiN X :H, Al 2 O 3 /SiN X :H). [11,16] More recently there have been observations of a similar defect in structures using polysilicon/tunnel oxide passivating contacts.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Processes and their Impact on Surface‐Related Degradation

Hamer

Chen²

2021

Physica Rapid Research Ltrs

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Surface‐related degradation (SRD) is a phenomenon whereby recombination in the near‐surface region of silicon wafers increases under elevated temperatures with or without carrier injection. Because of its importance for solar cell processing and operation, SRD occurring under light soaking at temperatures between 80 and 200 °C has recently attracted great interest. In this work, two post‐firing processes that can affect the formation of SRD are investigated. The first is the replacement of the passivating dielectric layers and the second is the use of thermal annealing between 300 and 400 °C. Post‐firing etching and redeposition of dielectric layers have minimal impact on subsequent degradation. In contrast, a thermal anneal at 400 °C for 30 min can reduce the extent of SRD by a factor of 6. These results imply that the interface between silicon and the dielectric itself is not the critical factor in the formation of SRD. The most likely explanation is that thermal processing causes an alteration in the silicon substrate that affects the subsequent formation of SRD.

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Section: Discussionmentioning

confidence: 99%

“…It has important implications for long‐term stability testing [ 12 ] and can reduce long‐term performance for certain solar cell architectures in the field. [ 13–15 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal Processes and their Impact on Surface‐Related Degradation

Hamer

Chen²

2021

Physica Rapid Research Ltrs

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“…[13][14][15] Additionally, several studies have also demonstrated a firinginduced degradation in the tunnelling oxide/doped polysilicon passivation scheme employed in TOPCon solar cells. 16,17 The incorporation of a hydrogenation step is critical to achieve the required chemical passivation for the tunnelling oxide, polysilicon contact. 18 The chemical passivation at the SiO 2 /c-Si interface is typically achieved by high-temperature annealing in the presence of a hydrogenated dielectric layer.…”

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confidence: 99%

24.58% efficient commercial n‐type silicon solar cells with hydrogenation

Chen

Wright

Chen

et al. 2021

Progress in Photovoltaics

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Tunnelling oxide passivated contact (TOPCon) solar cells are gaining significant commercial interest, due to the potential for high efficiency. Industrially, this passivated contact scheme is typically coupled with an n-type Czochralski (Cz) wafer. JinkoSolar Holding Co., Ltd. is one of the leading manufacturers that are producing n-type TOPCon solar cells (referred to as 'HOT' cells) on a commercial scale. In this work, the influence of a post-cell hydrogenation step, using illumination from an LED light source, on the performance and stability of n-type TOPCon solar cells is investigated.The incorporation of this additional hydrogenation treatment led to an average efficiency enhancement of 0.64% abs on a batch of 50 cells made in an industrial environment. This significant improvement was caused by a 6.9 mV and 1.04% abs increase in open-circuit voltage (V OC ) and fill factor (FF), respectively. We also assessed the stability and found almost no light-and elevated temperature-induced degradation (LeTID) in hydrogenated n-type TOPCon cells. Testing at 70 ± 5 C under 1-sun illumination revealed that the maximum degradation is limited to 0.06% rel .Following further stability testing, the efficiency increased beyond the initial value, up to 0.4% rel increase after 120 h. By incorporating this hydrogenation process into the production, an average line efficiency of 24.08% and V OC of 707.5 mV was achieved. The champion cell from the batch displayed an efficiency of 24.58%, as certified by measurement at the Chinese Academy of Sciences.

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Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena

Najjar

Rezgui²,

Bouaïcha³

et al. 2021

Materials Science in Semiconductor Processing

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Degradation and Regeneration of n ⁺-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing

Cited by 18 publications

References 20 publications

Thermal Processes and their Impact on Surface‐Related Degradation

Thermal Processes and their Impact on Surface‐Related Degradation

24.58% efficient commercial n‐type silicon solar cells with hydrogenation

Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena

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Degradation and Regeneration of n +-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing

Cited by 18 publications

References 20 publications

Thermal Processes and their Impact on Surface‐Related Degradation

Thermal Processes and their Impact on Surface‐Related Degradation

24.58% efficient commercial n‐type silicon solar cells with hydrogenation

Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena

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Product

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Degradation and Regeneration of n ⁺-Doped Poly-Si Surface Passivation on p-Type and n-Type Cz-Si Under Illumination and Dark Annealing