Deflection of threading dislocations in patterned 4H–SiC epitaxial growth

Tsuchida, Hidekazu; Takanashi, R.; Kamata, Isaho; Hoshino, Norihiro; Makino, Emi; Kojima, Jun

doi:10.1016/j.jcrysgro.2014.06.034

Cited by 8 publications

(10 citation statements)

References 28 publications

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“…Yakimova et al in [14]. In the CVD growth of SiC on patterned substrates it was shown that high surface steps with a steep slope can lead to the bending of screw dislocations [15]. In the facet area of the crystal the surface morphology is characterized by smaller steps and growth spirals.…”

Section: Discussionmentioning

confidence: 99%

Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Arzig

Salamon

Hsiao

et al. 2020

Journal of Crystal Growth

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Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductivity led to an increased radial temperature gradient. The evolution of the growth front was monitored using the in-situ computed tomography (CT). A slightly bent growth interface and a bigger facet are formed during the growth applying a lower radial temperature gradient while a smaller facet and steeper crystal flanks are formed in the case of the larger radial temperature gradient. Micropipes are deflected laterally by large surface steps on the steep crystal flanks and a reduction of threading edge dislocations by 60% is revealed by KOH defect etching.

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Section: Discussionmentioning

confidence: 99%

Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Arzig

Salamon

Hsiao

et al. 2020

Journal of Crystal Growth

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“…grown layer, which is the largest diameter reported for a TSSG SiC crystal, has been demonstrated. In addition, threading dislocations (TDs) from the seed crystal have been observed to be converted into basal plane dislocations because of the advancement of macrosteps and finally be extruded from the grown layer. − When an off-axis seed crystal was used, an extremely high-quality SiC crystal was obtained …”

Section: Introductionmentioning

confidence: 99%

“…The latter effect is especially pronounced when the size of the crystal increases. Although high and steep macrosteps are required to facilitate the TD conversion process and reduce the TDs from the seed crystal, 10 over-developed macrosteps can introduce macroscopic defects such as solvent inclusions and two-dimensional (2D) nucleation of polycrystals. 14 Therefore, solution growth of SiC requires ideal conditions under which the macrosteps are neither too low for the TD conversion to occur nor too high for the solvent inclusion and 2D nucleation to be induced.…”

Section: Introductionmentioning

confidence: 99%

Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC

Dang

Liu

Zhu

et al. 2023

Crystal Growth & Design

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In the solution growth of the SiC crystal, macrosteps with sufficient height on an off-axis substrate are required to reduce defects and achieve a high-quality grown layer. However, overdeveloped macrosteps can induce new defects and adversely affect the crystal quality. To better understand and control the behavior of macrosteps corresponding to the control parameters of the growth system, a simulation method that consists of a global twodimensional computational fluid dynamic (CFD) model, a local three-dimensional CFD model near the growth front, and a kinetics model that describes the movement of macrosteps on the crystal surface is proposed. The simulation method is first applied to investigate the effect of the crystal rotation speed on macrostep morphology. Although the results indicate that a higher crystal rotation speed results in less step bunching, constantly rotating the crystal in one direction is demonstrated to be incapable of yielding a uniform macrostep distribution on the whole surface. Accordingly, a sophisticated control pattern is designed by periodically switching the flow direction underneath the crystal surface, where the proposed simulation method is critical to determine detailed control-parameter values. When the control pattern suggested by the simulation is used, a grown crystal with a uniform macrostep morphology and ideal step height on the whole surface is obtained in the practical experiment.

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“…Such growth conditions are usually to be avoided because the growth kinetics under the droplet is altered, resulting in a highly step bunched surface at the places where the Si droplets formed. On the other hand, it was shown recently that a step bunched surface can lead to threading dislocation conversion during epitaxial growth either by CVD [1] or liquid phase epitaxy (LPE) [2]. In ref [1] the step bunched morphology was artificially created by photolithography patterning while in ref [2] it is simply the consequence of growth from a liquid phase.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, it was shown recently that a step bunched surface can lead to threading dislocation conversion during epitaxial growth either by CVD [1] or liquid phase epitaxy (LPE) [2]. In ref [1] the step bunched morphology was artificially created by photolithography patterning while in ref [2] it is simply the consequence of growth from a liquid phase. The formation and control of a highly step bunched morphology is the study of recent works for the case of LPE [2][3][4] while this is almost a blank topic for CVD.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

Soulière

Carole

Camarda

et al. 2016

MSF

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The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition. This was performed by melting a bulk piece of Si on a 4°off 4H seed in the temperature range of 1500 - 1600°C, for 15 min. After etching the remaining Si, the 4H surface was found to be successfully highly step bunched with steps very parallel and regular. A mechanism of dissolution-precipitation was proposed, which could occur both on a short (step to step) and long (centre to periphery) range. This process is kinetically limited at low temperature (1500-1550°C) and considered to be close to the equilibrium at 1600°C.

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Deflection of threading dislocations in patterned 4H–SiC epitaxial growth

Cited by 8 publications

References 28 publications

Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

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