Deffect profiling in the SiO&lt;inf&gt;2&lt;/inf&gt;/ Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; interface using Variable T&lt;inf&gt;charge&lt;/inf&gt;-T&lt;inf&gt;discharge&lt;/inf&gt; Amplitude Charge Pumping (VT&lt;sup&gt;2&lt;/sup&gt;ACP)

Zahid, Mohammed; Degraeve, R.; Cho, M.; Pantisano, L.; Aguado, Daniel Ruiz; Houdt, J. Van; Groeseneken, G.; Jurczak, M.

doi:10.1109/irps.2009.5173219

Cited by 3 publications

(3 citation statements)

References 7 publications

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“…The application of methodologies such as variable T charge -T discharge amplitude charge pumping (VT 2 ACP) [17] or trap spectroscopy by charge injection and sensing (TSCIS) [18] to directly measure the high-k bulk defect is extremely Fig. 3.…”

Section: N Ot From the Pulsed I D -V G (Piv)mentioning

confidence: 99%

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂

Cho

Kaczer

Kauerauf

et al. 2013

IEEE Electron Device Lett.

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The negative bias temperature instability (NBTI) reliability of sub-1-nanometer equivalent oxide thickness (EOT) ZrO 2 and HfO 2 dielectrics with metal gate is investigated. The threshold voltage shift ( V TH ) at identical NBTI overdrive stress conditions is observed to be lower in ZrO 2 than in HfO 2 field-effect transistors. Ring oscillator charge pumping is applied to determine interface trap generation ( N it ) in the sub-1-nanometer EOT devices, with ZrO 2 devices showing about one order of magnitude lower N it than HfO 2 device. However, the N it contribution to the total V TH is very limited in sub-1-nanometer EOT devices, as the recoverable component from the pre-existing bulk defects dominates the whole NBTI degradation. Pulsed Id-Vg technique is applied to analyze the pre-existing bulk defects in those sub-1-nanometer EOT devices, and lower pre-existing bulk defect density is shown in ZrO 2 , which decisively reduces NBTI in ZrO 2 gate dielectric.Index Terms-Dielectric reliability, negative bias temperature instability (NBTI), oxide defect, thin equivalent oxide thickness (EOT).

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Section: N Ot From the Pulsed I D -V G (Piv)mentioning

confidence: 99%

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂

Cho

Kaczer

Kauerauf

et al. 2013

IEEE Electron Device Lett.

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“…Conversely, in Hf-based dielectrics a decrease in frequency leads to an increase in I cp since carriers have enough time to tunnel into high-k bulk traps. 16 Charge pumping techniques play an important role in inspection of defects. This study mainly focuses on high-k bulk shallow traps measured by the charge pumping technique at different falling and base level times for HfO 2 dielectric n-MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

High-k shallow traps observed by charge pumping with varying discharging times

Chang

et al. 2013

Journal of Applied Physics

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“…However, several studies even on the in-depth exploration of traps near the MIS interface have been reported using the CP method [9][10][11][12][13], and furthermore statistical distributions of individual trap position inside the gate dielectric, trap energy levels, capture/emission time constants, RTN amplitude, and correlation among these properties have been recently reported by characterization of individual traps based on RTN measurements [14].…”

Section: Introductionmentioning

confidence: 99%

Fluctuations in Electronic Properties of MOS Interface in Nanoscale MOSFETs

2011

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Fluctuations in the number, energy level, and carrier capture rate of Si/SiO 2 interface traps in small-gate-area metal-oxidesemiconductor field-effect transistors (MOSFETs) containing only a few interface traps have been directly observed. This observation is based on an understanding of charge pumping phenomena and a newly observed phenomenon of on(off)-time-dependent charge pumping characteristics in their rising (falling) portion. It is directly shown from experimental results that the fluctuation in the number of interface traps contained in an individual nanoscale MOSFET is fairly large, and that there are various interface traps with individual discrete energy levels and carrier capture rates. These fluctuations may have an impact on the variation in device performance of future digital metal-insulator-semiconductor (MIS) devices.

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Deffect profiling in the SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> interface using Variable T<inf>charge</inf>-T<inf>discharge</inf> Amplitude Charge Pumping (VT<sup>2</sup>ACP)

Cited by 3 publications

References 7 publications

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂

High-k shallow traps observed by charge pumping with varying discharging times

Fluctuations in Electronic Properties of MOS Interface in Nanoscale MOSFETs

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Deffect profiling in the SiO<inf>2</inf>/ Al<inf>2</inf>O<inf>3</inf> interface using Variable T<inf>charge</inf>-T<inf>discharge</inf> Amplitude Charge Pumping (VT<sup>2</sup>ACP)

Cited by 3 publications

References 7 publications

Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2

High-k shallow traps observed by charge pumping with varying discharging times

Fluctuations in Electronic Properties of MOS Interface in Nanoscale MOSFETs

Contact Info

Product

Resources

About

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂

Improved NBTI reliability with sub-1-nanometer EOT ZrO₂ gate dielectric compared with HfO₂