Defects of ultrathin Cu films on Mo(1 1 0) studied by thermal helium desorption spectrometry

Venugopal, Vinay; Thijsse, Barend J.

doi:10.1088/0022-3727/42/16/165412

Cited by 6 publications

(3 citation statements)

References 31 publications

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“…gas-filled voids. Such process was intensively studied in metals [1][2][3], thin layers [4,5], and also in semiconductors, as the phenomenon plays a crucial role for Smart-cut processing [6] and gettering of impurities [7,8].…”

Section: Introductionmentioning

confidence: 99%

Thermal Desorption of He Implanted into Ge

et al. 2019

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The thermal desorption spectrometry (TDS) measurements of He implanted with the energies 80 keV and 100 keV into Ge was considered. The release of the noble gas took place at temperature range 600-950 K. The TDS spectra had a form of a very wide peak consisting of two parts which means that one deals with two states of He into Ge. No surface blistering or formation of craters was observed after the annealing of the samples implanted with the fluence 1 × 10 16 cm −2. the critical fluence needed for bubble formation in Ge is higher than for Si. The analysis of the peak shift with the heating ramp rate allows estimation of desorption activation energies. They are close to 0.8 eV for both peaks (100 keV) while the energy for the second peak in the case of E = 80 keV was more than twice higher.

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Section: Introductionmentioning

confidence: 99%

Thermal Desorption of He Implanted into Ge

et al. 2019

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“…[36][37][38][39] The orientations of the chosen surface models are also consistent with the experimental results. 2,7,8,10,16,17,[40][41][42][43][44] The top and side views of the bcc-( 110 The adsorption energy of the Cu atoms on different surface structures is defined by 24,26)…”

Section: Computational Methods and Modelmentioning

confidence: 99%

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

Chen

Jiang

et al. 2011

Jpn. J. Appl. Phys.

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In this work, first-principles calculation based on the density functional theory was applied to study Cu adhesion on the surfaces of Rh(111), Ir(111), Pd(111), Ta(110), Mo(110), Co(0001), Os(0001), and Ru(0001), on which the adsorption energy, electron density difference, and geometrical structures of Cu were investigated. The analysis of the calculated and experimental results shows that the atomic chemical interaction, surface lattice mismatch, and crystal lattice type have marked effects on Cu adhesion on glue layers. Cu atoms on all the metal surfaces studied in this work are more likely to form the fcc structure with a quasi-(111) orientation. The coupling effect of the large surface lattice mismatch and the lattice type difference between Cu and the metal surface can greatly reduce Cu adhesion ability. Among all the studied metals, Ir and Os showed comparable adhesion ability to Ru and can be considered as promising Cu glue layers for Cu interconnects.

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“…TDS spectroscopy is often used to study radiation induced damage as well as retention/release of gases like deuterium in the plasmafacing materials intended to be used in the controllable fussion devices including tungsten [2,3], beryllium [4][5][6] or graphite [7]. The technique was often employed in the case of materials widely applied in electronics, like silicon [8,9] for implanted metals [10][11][12] as well as thin films [13][14][15]. Special attempts were made to study formation of bubbles (gas filled cavities) as a result of highfluence (≈ 10 16 cm −2 and even more) inert gas ion implantation [8,[16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Thermal Desorption of Krypton Implanted into Silicon

et al. 2017

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The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2 × 10 16 cm −2 ) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr + G double implantation was performed. A sudden Kr release was observed in the ≈ 1100−1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈ 3.2 eV for both releases.

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Defects of ultrathin Cu films on Mo(1 1 0) studied by thermal helium desorption spectrometry

Cited by 6 publications

References 31 publications

Thermal Desorption of He Implanted into Ge

Thermal Desorption of He Implanted into Ge

Density Functional Theory Study of Cu Adhesion on Rh, Ir, Pd, Ta, Mo, Ru, Co, and Os Surfaces

Thermal Desorption of Krypton Implanted into Silicon

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