Thermal Desorption of He Implanted into Ge

Turek, M.; Droździel, A.; Pyszniak, K.; Prucnal, J. Żuk S.; Vaganov, Yu. A.

doi:10.12693/aphyspola.136.285

Cited by 3 publications

(5 citation statements)

References 33 publications

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“…The projected implantation ranges were 75 nm (100 keV) and 110 nm (150 keV) with the stragglings 35 nm and 50 nm, correspondingly. These results are very similar to that obtained in the case of Ar implanted into Ge [36]. However, the maximum dopant concentration are smaller due to the fact that the fluence is 10 16 cm -2 in the case of GaAs target.…”

Section: Resultssupporting

confidence: 87%

“…They are results of coalescence of vacancies or their small clusters, sometimes containing trapped Ar atoms, as it was in the case of He in germanium lattice [21,47]. As temperature increases bubbles become more and more pressurized as the pressure riches a critical point and gas is released at it was observed both for heavier inert gases in Si [29] and Ge [36].…”

Section: Resultsmentioning

confidence: 93%

“…A high fluence (10 17 cm -2 ) H + implantation followed by annealing (T > 700 K) resulted in surface blistering and even crater formation for large enough doping [35]. Sudden release of Ar implanted with energies 100 and 150 keV were observed for temperatures in the range 790-850 K while the corresponding desorption activiation energies were equal 3.2 eV and 2.2 eV, respectively [36]. On the other hand, the release of He from Ge has a form of wide bands [37].…”

Section: Introductionmentioning

confidence: 99%

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Thermal Desorption of Argon Implanted into Gallium Arsenide

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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Thermal desorption of Argon (Ar) implanted with energies 150 keV and 100 keV with fl uence 1×10 16 cm -2 into gallium arsenide is considered. A sudden release of Ar is observed in temperature range 1100-1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values -these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Desorption of Argon Implanted into Gallium Arsenide

Turek¹,

Droździel²,

Pyszniak³

et al. 2022

Adv. Sci. Technol. Res. J.

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“…Very thin (3 µm) transparent PET foils (bi-axially oriented, density of ≈ 1.4 g/cm 3 supplied by Goodfellow) were implanted with 150 keV beam of Na + ions employing the UNIMAS implanter equipped with an arc discharge ion source with evaporator [56][57][58], using NaCl as a working substance. Implantations were performed at room temperature with the fluences of 1 × 10 14 cm −3 , 1 × 10 15 cm −3 , and 1 × 10 16 cm −3 .…”

Section: Methodsmentioning

confidence: 99%

Modification of PET Polymer Foil by Na⁺ Implantation

et al. 2019

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Very thin (3 µm) polyethylene terephthalate (PET) foils were irradiated with 150 keV Na + ions with the fluences in the range from 1 × 10 14 cm −2 up to 1 × 10 16 cm −2. Modification of chemical structure of the implanted polymer was studied with the Fourier transform infrared and Raman spectroscopies. Destruction of numerous chemical bonds as well as formation of carbon clusters made of sp 2 hybridised C atoms and conducting cluster networks were demonstrated. The increasing presence of chain structures in the graphite-like carbonised layer is pointed out as the G band shift and decrease of D band could be seen as irradiation fluence rises. The large increase of the modified sample absorbance with the implantation fluence in the UV-VIS region was observed. The decrease of optical band-gap energy from 3.95 eV for the pristine sample down to 0.7 eV for the most heavily treated sample was estimated using the Tauc plot. Reduction of bulk resistivity by more than 8 orders of magnitude is shown in the case of the sample implanted with the fluence 1 × 10 16 cm −2. The sheet resistivity of the sample was also reduced by 5 orders of magnitude. The effect was observed on both sides of the sample, probably as the result of chemical transformations due to local increase of the polymer foil temperature. The moderate increase (15-200%) of the dielectric constant is observed in the frequency range up to 1 MHz and the change rises with the implantation fluence.

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“…Very thin (3 µm, density 1.4 g/cm 3 ) PET polymer foils provided by Goodfellow were irradiated with 150 keV Li + . The ion beam was produced using LiCl as a feeding substance and an arc discharge ion source with the internal evaporator described in [71,72]. Implantations were done with the fluences 10 14 cm −2 , 10 15 cm −2 , 5 × 10 15 cm −2 , 10 16 cm −2 , and 2 × 10 16 cm −2 .…”

Section: Methodsmentioning

confidence: 99%

Modification of PET Foil by 150 keV Li⁺ Ion Implantation

et al. 2022

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Very thin (3 µm in thickness) polyethylene terephthalate polymer foils were implanted with 150 keV Li + with fluences in the range from 1×10 14 cm −2 up to 2×10 16 cm −2 . Modification of the irradiated polymer microstructure was studied with the Fourier transform infrared spectroscopy and Raman spectroscopy. Breaking of a variety of chemical bonds followed by the formation of carbon clusters made of sp 2 C was proved. The dominance of the rings in the carbonized, graphite-like subsurface layer is demonstrated based on the fact that the G band prevails in the Raman spectra for larger Li + fluences. The rise of the absorbance within 200-800 nm is observed. Tauc's plots analysis enables the estimation of optical bandgap values that decrease from 3.95 eV (pristine polyethylene terephthalate) down to 1.4 eV (fluence of 2 × 10 16 cm −2 ). This change is not as dramatic as in the case of heavier projectiles like K + or Na + . Reduction of surface resistivity by more than 2 orders of magnitude is observed in the case of the sample irradiated with the fluence 1 × 10 16 cm −2 , and this effect is much smaller than that induced by the heavier projectile bombardment with the same fluence. topics: polymers modification, ion implantation, polyethylene terephthalate (PET)

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Thermal Desorption of He Implanted into Ge

Cited by 3 publications

References 33 publications

Thermal Desorption of Argon Implanted into Gallium Arsenide

Thermal Desorption of Argon Implanted into Gallium Arsenide

Modification of PET Polymer Foil by Na⁺ Implantation

Modification of PET Foil by 150 keV Li⁺ Ion Implantation

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Thermal Desorption of He Implanted into Ge

Cited by 3 publications

References 33 publications

Thermal Desorption of Argon Implanted into Gallium Arsenide

Thermal Desorption of Argon Implanted into Gallium Arsenide

Modification of PET Polymer Foil by Na+ Implantation

Modification of PET Foil by 150 keV Li+ Ion Implantation

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Product

Resources

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Modification of PET Polymer Foil by Na⁺ Implantation

Modification of PET Foil by 150 keV Li⁺ Ion Implantation