Defects in GaAs after Si indiffusion and annealing: A TEM and CL study

Herzog, L. F.; Egger, Ulrich; Breitenstein, O.; Hettwer, H.-G.

doi:10.1016/0921-5107(94)01137-0

Cited by 11 publications

(4 citation statements)

References 24 publications

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“…Silicon, from the bottom substrate or even from the STI oxide, could also be at the origin of the higher conductivity in InP, but the STI pattern makes the characterization of Si diffusion in InP difficult and the process temperatures are too low to explain this behavior. 23 In general, carbon contamination coming from the decomposition of the ligands of the alkyl precursor could also play a role in the unintentional doping of III-V during both blanket and selective growths. But it is established 24 that the carbon-incorporation in the III-V matrix is inversely proportional to the growth temperature, thereby this option isn't viable.…”

Section: Discussionmentioning

confidence: 99%

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Merckling

Waldron

Jiang

et al. 2013

Journal of Applied Physics

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Articles you may be interested inHeteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition J.Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration Heterogeneous integration of III-V semiconductors on Si substrate has been attracting much attention as building blocks for next-generation electronics, optoelectronics, and photonics. In the present paper, we studied the selective area epitaxial studies of InP grown on 300 mm on-axis Si (001) substrates patterned with Shallow Trench Isolation (STI) using the necking effect technique to trap crystalline defects on the sidewalls. We make use of a thin Ge buffer in the bottom of the trench to reduce interfacial strain at the interface and to promote InP nucleation. We could show here, by systematic analysis, the strong impact of the growth temperatures and pressures of the InP layer on the growth uniformity along the trench and crystalline quality that we correlated with resistance changes and interdiffusion measured in the III-V layer. The key challenge remains in the ultimate control of crystalline quality during InP selective growth in order to reduce defect density to enable device-quality III-V virtual substrates on large-scale Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Discussionmentioning

confidence: 99%

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Merckling

Waldron

Jiang

et al. 2013

Journal of Applied Physics

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“…This means that the loops are bounded by dislocations of the same nature. This is suggested by the fact that these defects arise only after annealing at 600 C (line-like defects were only observed after annealing at this temperature), whereas formation of interstitial loops in these samples occurs at 500 C. Thus these defects are not thought to be Frank loops composed of Ga and As, as suggested for similar defects found in Si-diffused Zn-doped GaAs by Herzog et al [9]. Although there is not consensus on the nature of these loops, Muto et al [8] believed them to be composed of Si, and it is considered most likely that those found in this study are of a similar nature.…”

Section: Si Precipitates On {111} Planesmentioning

confidence: 51%

Parallelogram-Shaped and Triangular Defects in GaAs

Kroon

Neethling

2000

phys. stat. sol. (a)

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Faulted triangular defects on the {111} planes, bounded along the h110i directions, are shown to develop after annealing in Be-implanted Si doped GaAs. These defects have not been reported for Be implantation studies using semi-insulating GaAs, and are thought to be planar Si precipitates. Similar defects have been reported by other workers near the highly compensated p-n junction region in diffused GaAs, and also in highly Si-doped GaAs. Prismatic parallelogram-shaped loops on the {110} planes, comprised of excess Ga and As interstitials created during implantation and bounded by perfect 90 dislocations along the h112i directions, are also identified in the implanted samples annealed at 500 C. These loops are replaced by triangular loops on the {110} planes in samples annealed at 600 C and higher. A model for the triangular loop formation, based on differing stabilities of the a-and b-type 90 dislocations, is proposed. To our knowledge, this is the first report of triangular loops on the {110} planes in GaAs.

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“…to its high binding energy, as the two point defects constituting it are nearest neighbours on lattice sites (Herzog et al 1995). The incorporation reaction of Te as a donor in the GaAs lattice is Te + V As → Te +…”

Section: Discussionmentioning

confidence: 99%

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

Frigeri¹,

Weyher²,

Jiménez³

2000

J. Phys.: Condens. Matter

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This paper is aimed at explaining the absence of As precipitates decorating dislocations in Te-doped GaAs which are found instead when other dopants are used. By transmission electron microscopy it is seen that dislocations in Te-doped GaAs are always tangled and surrounded by clouds of extrinsic loops but are not decorated with any As precipitate. Diluted Sirtl-like etching used with light (DSL etching), micro-Raman and EBIC (electron-beam-induced-current) results support the conclusion that the regions containing the loop clusters around dislocations are enriched in the TeAsVGa acceptor complex that has formed due to the diffusion of Te towards the dislocation. The formation of TeAsVGa causes an undersaturation of Ga vacancies and hence the production of a supersaturation of Ga interstitials. The latter is the driving force for the formation of the observed extrinsic loops and dislocation tangling through climb. Such processes, however, consume As interstitials which are thus no longer available for the formation of decoration As precipitates. The peculiar characteristic of Te of forming acceptor complexes like TeAsVGa is discussed with reference to the group IV dopants.

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Defects in GaAs after Si indiffusion and annealing: A TEM and CL study

Cited by 11 publications

References 24 publications

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Parallelogram-Shaped and Triangular Defects in GaAs

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

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