Defect Localization Using Time-Resolved Photon Emission on SOI Devices that Fail Scan Tests

Bodoh, Dan; Black, Ed; Dickson, Kris; Ron, Wang; Cheng, Tim; Pakdaman, N.; Vickers, Jim; Cotton, Dan; Lee, Birk

doi:10.31399/asm.cp.istfa2002p0655

Cited by 12 publications

(1 citation statement)

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“…This technology can be detected non-invasive Probe switching activity inside VLSI circuits for measurements Skew, propagation delay, duty cycle, etc. [1][2][3][4][5][6][7][8][9]. In recent the years, its capabilities have been continuously expanded.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

Lin¹,

Yong²

2021

AJECE

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Advanced technology nodes with small feature sizes and increased design complexity make it increasingly time-consuming to determine the root cause of yield loss. Several of the defects also occur inside a circuit making physical failure analysis (PFA) and electrical failure analysis (EFA) much more challenging. EFA has been instrumental in driving product yield and reliability for consumer products such as mobile phones and computer chips. It involves the use of state-of-the-art tools and techniques. One of the main changes EFA analyses is an enhancement of dynamic EFA in circuit failed in functional test. We propose a technique for advanced Electrical Failure Analysis (EFA) tool with a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits with enhanced sensitivity for discussing Time Resolved Emission (TRE). In order to understand the figures of advantage that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for low voltage applications. We will provide that measurements down to a low 1 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform. we hope to be able to show soon even better results that should allow continued application of the non-invasive TRE and PICA technology towards future scaled nodes with smaller gates and lower supply voltages.

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