Defect generation at silicon surfaces during etching and initial stage of oxidation

Kliefoth, K.; Füssel, W.; Flietner, H.

doi:10.1016/0167-9317(95)00014-y

Cited by 14 publications

(5 citation statements)

References 8 publications

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“…78 are generally consistent with other investigations of Flietner et al [717,718,720,721,723], as well as with the earlier analyses of Allen and Gobeli [710], Yamagishi [572], and Lam [716]. All of these show that well-passivated Si surfaces feature a`U-shaped' distribution of surface states, which is typically symmetric about midgap.…”

Section: Energy Distributionsupporting

confidence: 80%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,515

804

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Section: Energy Distributionsupporting

confidence: 80%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,515

804

View full text Add to dashboard Cite

“…7͒ are consistent with the removal of atoms at defect sites on the otherwise energetically more stable terraces. The etching events are accompanied by a competing surface oxidation, as suggested by the large increase of the density of surface states 18,28 and recently confirmed by synchrotron radiation photoelectron spectroscopy experiments. 17 The vanishing of the triangular pattern after longer deposition times observed in Fig.…”

Section: Discussionsupporting

confidence: 55%

“…17 After 5 s of Pt deposition, however, the density of surface states increases toward 6 ϫ 10 12 eV −1 cm −2 , which is on the order of magnitude of that reported for oxidized silicon surfaces. 18,19 In the presence of the redox couple Fe͑CN͒ 6 −3/−4 , the appearance of two capacitance peaks at Ϫ0.25 and Ϫ0.4 V ͑Fig. 4͒ can be associated with different kinds of surface states with distinct density of states distributions.…”

Section: Discussionmentioning

confidence: 99%

Platinum Deposition onto Si Single Crystal Surfaces I. Chemical, Electronic, and Morphological Surface Processes under Depletion Conditions

Muñoz

Lewerenz

2008

J. Electrochem. Soc.

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The initial stages of Pt electrodeposition from H 2 PtCl 6 solutions on Si͑111͒ surfaces were investigated by standard electrochemical techniques and atomic force microscopy. It was found that under depletion conditions the reduction of Pt species shows a potential dependence that results from the discharging of surface states. The Pt deposition rate increases with the surface state density. Injection of holes from the redox level leads to formation of an ultrathin silicon oxide layer, which takes place simultaneously as a chemical process. Capacitance-voltage measurements show that the potential-dependent Pt deposition increases the concentration of surface states, related to the solvolytic oxidation of Si surface defect sites. The topographical analysis of the surface shows initial Pt deposition on the tips of atomic terraces that extends to deposition along step edges for higher coverage. Also, step bunching is observed with a step height increase to 2-5 nm.

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“…The presence of these states can be assigned to the adsorption of F − , OH − , and O in the back bonds. 15,16 Therefore, a certain site selectivity arises due to the stronger electronic coupling of solvated Pt ions with -OH surface bonds than with fully coordinated H-terminated hydrophobic Si atoms. 17 The exponential dependence of the cathodic current with potential, as denoted by the rate scan dependence of peak C 1 , is consistent with the exponential dependence of the electron occupancy of surface states at the Fermi level, n ss = n ss 0 exp͓−͑ ss − F ͒/kT͔.…”

Section: Discussionmentioning

confidence: 99%

Platinum Deposition onto Silicon Single-Crystal Surfaces II. Mechanistic Aspects of the Growth of Pt Islands

Muñoz

Lewerenz

2009

J. Electrochem. Soc.

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The chemical and morphological surface transformations accompanying the deposition of Pt from normalH2PtCl6 solutions onto hydrogen-terminated normaln -Si(111) surfaces were investigated in Part I [ J. Electrochem. Soc. , 155 , D527 (2008) ]. In this second part, an analysis of the nucleation and growth mechanisms of Pt islands is presented. Oxidized surface atoms act as preferential sites for the nucleation of nanoislands, introducing surface states that facilitate the electron transfer. A potential-independent hole injection into the valence band drives surface etching, which leads to an increasing number of nucleation sites. The energy level of the surface states above the redox level of the hydrogen evolution leads to a strong hydrogen evolution accompanying the nucleation and growth of Pt particles at low nucleation overpotentials.

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Defect generation at silicon surfaces during etching and initial stage of oxidation

Cited by 14 publications

References 8 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Platinum Deposition onto Si Single Crystal Surfaces I. Chemical, Electronic, and Morphological Surface Processes under Depletion Conditions

Platinum Deposition onto Silicon Single-Crystal Surfaces II. Mechanistic Aspects of the Growth of Pt Islands

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