Defect formation mechanism in beam-induced lateral epitaxy on (111)B GaAs substrate

Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

“…Another way to suppress the roughening is the use of high growth temperature. Rotational twins were utterly suppressed in its formation by the increase of the growth temperature to 600 1C in our previous study [9].…”

“…Recently, we proposed a new method for lateral growth called beam-induced lateral growth (BILE), which enables us to obtain lateral growth in molecular-beam epitaxy (MBE) [6][7][8][9]. In BILE, lateral growth is accomplished on prefabricated truncated ridges employing a low angle incidence of molecular beams.…”

“…The direct observation of the defects by atomic force microscope (AFM) showed that the origin of the defects was a rotation twin. By a series of experiments, where the growth conditions and the substrate mis-orientations were changed, it was found that the defects originating from rotation twins can be suppressed by the usage of off-axis substrates or the increase of the growth temperature [9]. Nevertheless, the detailed mechanism of the defect formation is not clarified yet.…”