Defect Dynamics in Proton Irradiated CH₃NH₃PbI₃ Perovskite Solar Cells

Perovskite solar cell resilience to fast neutrons

“…protons and electrons) and perovskites, to understand the possible degradation pathways experienced by these materials in a low earth orbit and space. [9][10][11][12][13] From a quantitative point of view, in these experiments the authors usually irradiate their devices with a particle ux of 10 12 -10 15 cm À2 mimicking days of proton irradiation in outer space or years in a low earth orbit, observing little (5-6%) or no efficiency decrease aer such an irradiation protocol. Therefore, all these studies point towards the remarkable radiation tolerance of perovskite PVs which is even superior to that of crystalline silicon devices (i.e.…”

Probing Temperature-Dependent Recombination Kinetics in Polymer:Fullerene Solar Cells by Electric Noise Spectroscopy

“…The observed increase of µ with temperature and its bias dependence suggest that the dominant carrier transport mechanism is a thermally assisted hopping process between localized charge transport sites [13]. This conduction mechanism has been already found in diodes, field effect transistors, and in solar cells based on organic and inorganic disordered materials such as perovskites, small molecules and conjugated polymers [41][42][43][44][45]. …”

Functionalized rGO Interlayers Improve the Fill Factor and Current Density in PbS QDs-Based Solar Cells

“…where ε is the relative dielectric constant; Vbi is the built-in potential; Vr is the applied voltage; ND is assumed to be the concentration of charge carriers. Generally, the ND value in Equation (1) is the density of uncompensated donors or acceptors [31], but in our case, charge carrier transport in PbS-TBAI is dominated by electron transport since PbS-TBAI shows n-type behavior [32][33][34]; therefore, we assume ND as the concentration of free charge carriers (electrons). From the minimum capacitance in Figure 3, which is observed at a negative bias, the dielectric constant can be determined from the equation for the capacitance of a flat capacitor, C dep = εε 0 S W dep [29], where C dep is the measured capacitance, ε is the relative dielectric constant, S is the pixel area, W dep is the depletion region width of the device that equals the geometric thickness when the device is fully depleted, and ε 0 is the vacuum permittivity.…”

“…where ε is the relative dielectric constant; V bi is the built-in potential; V r is the applied voltage; N D is assumed to be the concentration of charge carriers. Generally, the N D value in Equation (1) is the density of uncompensated donors or acceptors [31], but in our case, charge carrier transport in PbS-TBAI is dominated by electron transport since PbS-TBAI shows n-type behavior [32][33][34]; therefore, we assume N D as the concentration of free charge carriers (electrons). When C −2 tends to 0, Vbi = Vr; thus, extrapolating the curve C −2 to zero, we can obtain the values of Vbi.…”