The vast majority of perovskite solar cell research has focused on organic–inorganic lead trihalide perovskites; herein, we present working inorganic CsPbI3perovskite solar cells for the first time.
The rapid development of the science and technology of organic semiconductors has already led to mass application of organic light‐emitting diodes (OLEDs) in television monitors of outstanding quality as well as in a large variety of smaller displays found in smartphones, tablets, and other gadgets, while introduction of the technology to the illumination sector is imminent. Notably, the requirements of all such applications for emission in the visible range of the electromagnetic spectrum are well tuned to the optical and electronic properties of typical organic semiconductors, thereby representing relatively “low‐hanging fruits,” in terms of material development and exploitation. However, the question arises as to whether developing materials suited for efficient near‐infrared (NIR, 700–1000 nm) emission is possible, and, crucially, desirable to enable new classes of applications spanning from through‐space, short‐range communications to biomedical sensors, night vision, and more generally security applications to name but a few. Here, the major fundamental hurdles to be overcome to achieve efficient NIR emission from organic π‐conjugated systems are discussed, recent progress is reviewed, and an outlook for further development of both materials and applications is provided.
We take advantage of a recent breakthrough in the synthesis of α,β-unfunctionalised 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) moieties, which we symmetrically conjugate with oligothienyls in an unexpectedly stable form, and produce a “metal-free” A-D-A (acceptor-donor-acceptor) oligomer emitting in the near-infrared (NIR) thanks to delocalisation of the BODIPY low-lying lowest unoccupied molecular orbital (LUMO) over the oligothienyl moieties, as confirmed by density functional theory (DFT). We are able to retain a PL efficiency of 20% in the solid state (vs. 30% in dilute solutions) by incorporating such a dye in a wider gap polyfluorene matrix and demonstrate organic light-emitting diodes (OLEDs) emitting at 720 nm. We achieve external quantum efficiencies (EQEs) up to 1.1%, the highest value achieved so far by a “metal-free” NIR-OLED not intentionally benefitting from triplet-triplet annihilation. Our work demonstrates for the first time the promise of A-D-A type dyes for NIR OLEDs applications thereby paving the way for further optimisation.
The development of efficient and biocompatible organic near-infrared emitters is attractive for many applications, spanning from photodynamic therapy [1] to light fidelity (Li-Fi) all-optical networking systems. [2][3][4] In particular, the range 700-1000 nm is interesting for medical applications, given the semitransparency of biological tissue in this spectral interval, [5] and we will specifically refer to this range as near-infrared (NIR) in the following text. Compared to conventional inorganic materials, organic NIR emitters are interesting also for their mechanical conformability, which makes them appealing for the integration in flexible and stretchable devices. [6] Furthermore, the metal-free organic light-emitting materials can be a cheap and biocompatible alternative to inorganic ones for application in wearable, implantable, or in vivo medical applications, such as for sensing of body temperature, heart and respiration rates, blood pressure, glucose level, and oxygenation. [7] In the search for ever-higher efficiencies, several classes of materials have been investigated, such as perovskite-structured methylammonium lead halides, [8][9][10] quantum dots, [11] and organometallic phosphorescent complexes. [12][13][14][15][16][17][18][19] However, although such hybrid materials afford substantial electroluminescence (EL) external quantum efficiency (EQE) in the NIR, in some cases exceeding 10% [8,10] or even 20% or so, [13] their use of heavy, toxic, and/or costly metals is not ideal for manufacturing, sustainability, environmental impact, and, in perspective, biocompatibility. Furthermore, in such hybrid systems, and in general in materials that leverage triplet excitons to boost the EQE, [20,21] exciton recombination dynamics typically fall in the hundreds of nanoseconds or even in the microsecond (or longer) range, which intrinsically limits the bandwidth when integrated in devices for telecommunications. For Li-Fi applications, [2][3][4] fluorescent molecular and polymeric materials are preferred, given that the typical fluorescence lifetime of these materials is of the order of few nanoseconds or less, thereby ideally allowing data transmission rates up to the Gb s −1 regime.In the last decade, scientists have attempted different strategies to develop heavy-metal-free NIR fluorescent organic light-emitting diodes (OLEDs), with chemical design essentially revolving around the careful combination of donor and acceptor groups to both tune the spectral range (up to 1000 nm) and maximize the EQE. [22][23][24][25][26][27][28][29][30][31][32][33] Very recently, we have, for Due to the so-called energy-gap law and aggregation quenching, the efficiency of organic light-emitting diodes (OLEDs) emitting above 800 nm is significantly lower than that of visible ones. Successful exploitation of triplet emission in phosphorescent materials containing heavy metals has been reported, with OLEDs achieving remarkable external quantum efficiencies (EQEs) up to 3.8% (peak wavelength > 800 nm). For OLEDs incorporating f...
The high power-per-weight ratio displayed by metal-halide perovskite PVs is a key advantage of these promising devices for applications that require low payload, such as in space and avionics.
A series of new near‐infrared (NIR) emitting copolymers, based on a low band gap 6‐(2‐butyloctyl)‐4,8‐di(thiophen‐2‐yl)‐[1,2,3]triazolo[4′,5′:4,5]benzo[1,2‐c]‐[1,2,5]thiadiazole (TBTTT) fluorophore copolymerized into a high band gap poly[3,3′‐ditetradecyl‐2,2′‐bithiophene‐5,5′‐diyl‐alt‐5‐(2‐ethylhexyl)‐4H‐thieno[3,4‐c]pyrrole‐4,6(5H)‐dione‐1,3‐diyl] (P2TTPD) host backbone, for polymer light‐emitting diode (PLED) applications is reported. PLEDs fabricated from the host polymer (P2TTPD‐0) show external quantum efficiencies (EQEs) up to 0.49% at 690 nm, with turn‐on voltage (Von) at only 2.4 V. By incorporating the TBTTT segments into the host polymer backbone, pure NIR emission peaking at ca. 900 nm is obtained with Von remaining below 5 V. This work demonstrates that such a low Von can be attributed to efficient intrachain energy and/or charge transfer to the TBTTT sites. When the NIR emitting copolymer (P2TTPD‐10) is blended with P2TTPD‐0, the TBTTT are confined to well‐separated polymer chains. As a result, the EQE from the blend is lower and the Von higher than that obtained from the pure copolymer (P2TTPD‐1.0) with equal content of TBTTT. An analogous copolymer (P4T‐1.0), consisting of poly[3,3′‐ditetradecyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene‐5,5′′′‐diyl] (P4T) as the host and 1% TBTTT as the NIR emitter, further demonstrates that pure NIR emission can be obtained only through optimized molecular orbital energy levels, as in P2TTPD‐1.0, which minimizes chances for either charge trapping or exciton splitting.
We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue (RGB) QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.
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