Defect density in non-selective and selective Si/SiGe structures

Menon, C.; Bentzen, A.; Landgren, G.; Radamson, Henry H.

doi:10.1016/s0022-0248(01)01879-6

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…An interfacial annealing treatment at 900°C for 40 s was applied prior to the Si 1Ϫx Ge x deposition in order to create a smooth Si buffer layer. 18 The Si and Si 1Ϫx Ge x growth temperature were 770 and 700°C, respectively. These growth temperatures lead to fully strained Si 1Ϫx Ge x layers with a surface roughness below our detection limit ͑ϳ5 Å͒ over the whole range of Ge amount, as revealed by HRXRD and AFM results presented in a previous study.…”

Section: Resultsmentioning

confidence: 99%

“…These growth temperatures lead to fully strained Si 1Ϫx Ge x layers with a surface roughness below our detection limit ͑ϳ5 Å͒ over the whole range of Ge amount, as revealed by HRXRD and AFM results presented in a previous study. 18 Second, the same structures were grown, this time covered by a 50 Å thick Si cap layer ͑see aforementioned growth conditions͒. The surface roughness, measured by AFM, of these stacked structures increased dramatically compared to uncapped samples.…”

Section: Resultsmentioning

confidence: 99%

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Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

Menon

Lindgren

Persson

et al. 2003

J. Electrochem. Soc.

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The selective growth of Si-buffer/Si 1Ϫx Ge x /Si-cap structures (0.14 Ͻ x Ͻ 0.33) on patterned substrates aimed for channel layer applications in a metal-oxide-semiconductor field effect transistor structure was investigated. By optimizing the growth parameters the surface roughness of these structures was reduced. Furthermore, selective epitaxy of high B-or P-doped SiGe layers for source/drain applications was also studied. Abrupt dopant profiles with a good epitaxial quality and low sheet resistances, e.g., 195 and 260 ⍀/ᮀ for 420 Å thick, B-doped Si 0.81 Ge 0.19 and P-doped Si 0.71 Ge 0.29 layers, respectively, were obtained. In this study, secondary ion mass spectroscopy, high-resolution reciprocal lattice mapping, atomic force microscopy, and cross-sectional transmission electron microscopy were used as the main characterization tools.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Selective Epitaxy of Si[sub 1−x]Ge[sub x] Layers for Complementary Metal Oxide Semiconductor Applications

Menon

Lindgren

Persson

et al. 2003

J. Electrochem. Soc.

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“…P-type doping is achieved by using diborane (B2H6), while arsine (ASH3) or phosphine (PH3) is used for n-type doping. SiH2Cl2 has also been used extensively for the selective epitaxial growth[52]. The selective growth with SiH4 is more difficult.…”

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confidence: 99%