Deep UV ${\rm Ta}_{2}{\rm O}_{5}$/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor

Chiu, C. J.; Shih, Shun-Cheng; Weng, W. Y.; Chang, Shoou–Jinn; Hung, Zhi-Xiong; Tsai, Tsung-Ying

doi:10.1109/lpt.2012.2193564

Cited by 25 publications

(12 citation statements)

References 13 publications

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“…Recently, amorphous oxide semiconductor (AOS) materials such as ZnSnO (a-ZTO), InGaZnO (a-IGZO), and InZnO (a-IZO) have attracted much attention for a range of applications, such as solar cells, 1,2 touch sensors, 3 photo-detectors, 4 and thin-lm transistors (TFTs). 5,6 In particular, a-IGZO-based TFTs have been considered as possible new devices for active-matrix at-panel displays (FPD) and towards a next-generation replacement for conventional TFTs based on hydrogenated amorphous silicon (a-Si:H) because of their wide band gap, high visible light transparency, high eld-effect mobility, and excellent switchable properties. 7,8 Most growth methods for the fabrication of AOS-based TFTs were based on vacuum processes, such as magnetic sputtering, pulsed laser deposition, etc.…”

Section: Introductionmentioning

confidence: 99%

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

et al. 2013

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Transparent and flexible thin film transistors (TFTs) with high performance based on solution processed graphene nanosheets (GNSs)-amorphous indium-gallium-zinc-oxide (a-IGZO) composites have been developed. A high electron mobility of 23.8 cm 2 V À1 s À1 has been achieved, which is about thirty times higher than those of the pristine a-IGZO TFTs (0.82 cm 2 V À1 s À1 ) and hydrogenated amorphous silicon (<1 cm 2 V À1 s À1 ). The on/off current ratio remains in a high order of 10 6 demonstrating the sustainability of the TFT devices. In addition, transparent GNSs-a-IGZO TFTs with a Ta 2 O 5 dielectric layer show superior resistance to mechanical bending with the variation of only 8% in mobility after 100 times of repeated cyclic bending compared with the degradation of more than 70% for the pristine a-IGZO device. Our results demonstrate that GNSs not only play an important role in forming a conducting network in the active matrix, but also enhance the mechanical bending stability of GNSsa-IGZO composites. It therefore paves a key step to develop large-scale applications for next-generation transparent and flexible electronics.

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Section: Introductionmentioning

confidence: 99%

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

et al. 2013

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“…Despite these advantages of the transistors, the intrinsic advantage of three-terminal device has been proved as one of the best candidates for improving the low power consumption and high-sensitivity ultraviolet photodetectors (UV-PDs) such as ZnO based photodetectors456. As we all know, different types of UV-PDs based on ZnO have been reported early from 1950s78; however, they mainly utilize two terminal devices, which include photoconductive, Schottky, and p/n-junction types9101112.…”

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confidence: 99%

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Liang

Liu

et al. 2016

Sci Rep

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We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelengthselectable feature for different response peaks, which suggests the possibility to build a unique dualband UV photodetector with this new architecture.The classic three-terminal device such as field-effect transistor (FET) is, and always has been, the workhorse of the microelectronics industry. Today, as metal-oxide-semiconductor FET (MOSFET) technology gains a huge commercialized market, coupled with the sharp growth in oxide semiconductors thin film transistor (TFT) for displays, the demand for FETs continues to increase throughout the world-wide microcircuits, and has led to a rapid expansion of microprocessors, memory chips and active matrix et al. over the last more than four decades [1][2][3] . Despite these advantages of the transistors, the intrinsic advantage of three-terminal device has been proved as one of the best candidates for improving the low power consumption and high-sensitivity ultraviolet photodetectors (UV-PDs) such as ZnO based photodetectors 4-6 . As we all know, different types of UV-PDs based on ZnO have been reported early from 1950s 7,8 ; however, they mainly utilize two terminal devices, which include photoconductive, Schottky, and p/n-junction types 9-12 . Moreover, for these structures, there are two critical drawbacks to be overcome before the ZnO UV-PDs constructed on UV imaging or other applications: 1) The persistent photoconductivity (PPC) effect, which was extensively ascribed to the existence of metastable shallow donor state of oxygen vacancy (V O ) located within the bandgap of ZnO [13][14][15][16] . Especially under the illumination of short-wavelength light, the PPC can cause the semiconductor material to remain conductive for hours/days, even in the absence of light. This increases the response times and limits the frame rates. 2) Low photo gain. A high performance UV-PDs needs high sensitivity. However, due to the high background carrier concentration and low photo gain, most UV-PDs suffer from low discrimination ratio between UV and dark/visible light, which limits the application of UV-PDs [17][18][19] . To suppress the PPC effect in oxide UV-PDs and amplify the photo gain, the ability of three terminal photo-TFTs in controlling the position of the Fermi level and carrier densities has ...

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“…Accordingly, the impact and importance of UVC PDs should be given more weight than those of visible-light PDs. 3,4 To fabricate high-quality and high-rejection ratio UVC PDs, wide-band gap semiconductor materials are required, such as ZnO, 5−7 Ga 2 O 3 , 8−11 InGaO, 12,13 InZnO, 14 InGaZnO, 15−20 ZnInSnO, 21 ZnGa 2 O 4 , and so forth. 22−24 ZnGa 2 O 4 is an oxide material with a wide band gap of ∼5.2 eV.…”

Section: Introductionmentioning

confidence: 99%

Energy-Saving ZnGa₂O₄ Phototransistor Improved by Thermal Annealing

Huang

Yuan

Tung

et al. 2020

ACS Appl. Electron. Mater.

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The development of phototransistors is attributed to material stability, and energy saving has remained a challenge. This is particularly important for single-crystalline ZnGa 2 O 4 epitaxial thin films essential for applications in sensing, energy conversion, and storage. We report herein that high-temperature thermal annealing with 800 °C in N 2 ambient for 1 h could significantly improve epilayer quality, which has been used to fabricate the phototransistor. It was found that the off current of the annealed sample decreased to be ∼2 pA and I DS induced by the visible current (at 450 nm) response can be reduced from 2 × 10 −8 to 3 × 10 −9 A as compared with that of the asgrown phototransistor. It could have resulted from the higher crystallinity and lower defect density after the annealing treatment. The responsivity of a ZnGa 2 O 4 phototransistor is 4.74 × 10 2 A/W at 240 nm, in which the rejection ratio is improved to 1.54 × 10 2 . Moreover, the resulting ZnGa 2 O 4 phototransistor has an excellent 0.4 s response time. The above results demonstrate that the high superiority of annealed ZnGa 2 O 4 can be applied in the deep ultraviolet photodevices.

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Deep UV ${\rm Ta}_{2}{\rm O}_{5}$/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor

Cited by 25 publications

References 13 publications

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Energy-Saving ZnGa₂O₄ Phototransistor Improved by Thermal Annealing

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Deep UV ${\rm Ta}_{2}{\rm O}_{5}$/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor

Cited by 25 publications

References 13 publications

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO

A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture

Energy-Saving ZnGa2O4 Phototransistor Improved by Thermal Annealing

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Product

Resources

About

Energy-Saving ZnGa₂O₄ Phototransistor Improved by Thermal Annealing