Deep trench isolation for a 50 V 0.35 μm based smart power technology

Pestel, F. De; Coppens, P.; Vleeschouwer, Herbert De; Colson, P.; Boonen, Sylvie; Colpaert, T.; Moens, P.; Bolognesi, D.; Coudenys, G.; Tack, M.

doi:10.1109/essderc.2003.1256843

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…The proposed approach has been applied to an industrial Power-On-Reset (POR) circuit ( Figure 5) designed in the 0.35 µm BCD technology I3T50 [21]. As shown in Figure 2, the defect-oriented test is applied by using a resistor-based fault model.…”

Section: Resultsmentioning

confidence: 99%

Optimization of analog fault coverage by exploiting defect-specific masking

Coyette

Gielen

Vanhooren

et al. 2014

2014 19th IEEE European Test Symposium (ETS)

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A new method is presented to detect catastrophic defects from the signal analysis of dynamic current consumption waveforms of analog circuits. While other techniques use the whole information in a Root-Mean-Square computation or in black-box techniques such as a neural network, the central point of this work resides in the selection of waveform samples to create a signature able to discriminate a defective circuit from a fault-free circuit. The selection of samples is implemented by the introduction of binary vectors to partially mask the data. Confronted with process variations, this technique offers the advantage of being straightforward and simple to implement in Automated Test Equipments. The generation of the masks is optimized to improve the defect coverage by means of a genetic algorithm maximizing the distance between the signature of the fault-free circuit and a faulty circuit. Results from simulations on industrial circuits show that the number of detected defects can be nearly doubled for specific stimuli.

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Section: Resultsmentioning

confidence: 99%

Optimization of analog fault coverage by exploiting defect-specific masking

Coyette

Gielen

Vanhooren

et al. 2014

2014 19th IEEE European Test Symposium (ETS)

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“…D EEP trench isolation (DTI) is a commonly used isolation technique in bipolar [1], [2], [3], BiCMOS [4], [5] as well as CMOS technologies [6], [7], [8]. Apart from its advantages regarding parasitic capacitance [9], latch-up, and ESD robustness [10], it is often used as a guard ring for improved isolation between neighboring epitaxial regions.…”

Section: Introductionmentioning

confidence: 99%

Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes

Stampfer,

Roger,

Grasser

et al. 2023

IEEE Trans. Electron Devices

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The isolation of photodetectors by deep trenches filled with insulating material is widely used to minimize crosstalk between devices fabricated on the same chip. At the same time, however, the interface of the deep trench isolation (DTI) introduces trap states that can act as recombination centers and affect the performance of Si photodetectors. In this work, the impact of carrier interaction with trap states at the DTI sidewalls on the responsivity of Si photodetectors using a 180 nm complementary metal-oxide-semiconductor technology is investigated. It is observed that DTI-terminated island photodiodes show larger responsivities compared to n-well guard (NWG) terminated island photodiodes. This superiority in terms of responsivity is more pronounced at high radiant fluxes because of reduced Shockley-Read-Hall (SRH) surface recombination at the lateral DTI to Si interface. Therefore, the responsivity of the DTI-terminated devices becomes nonlinear with respect to the incoming radiant flux. We show that this can be explained by the nonlinear minority carrier surface recombination at the DTI sidewalls. Responsivity measurements on reference samples with an NWG termination do not show this flux dependency, which confirms our conclusions. Furthermore, we investigate the influence of DTI sidewall implants to passivate the lateral oxide to silicon interfaces with respect to the nonlinear response and overall spectral response (SR). Our experimental findings are supported by TCAD simulations which are also presented in this work.

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