Deep space degradation of Si and GaAs solar cells

Bourgoin, J. C.; Kiliulis, R.; Gonzales, C.; Strobl, G.; Flores, C.; Bogus, K.; Signorini, C.

doi:10.1109/pvsc.1996.563984

Cited by 10 publications

(4 citation statements)

References 4 publications

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“…Therefore the short circuit current increases according to equation (3). The fourth region is when the short circuit falls sharply with increasing fluence.…”

Section: Introductionmentioning

confidence: 96%

“…The solar cells used in space are subjected to charged particles such as protons and electrons of a wide energy range. The highly energetic particles interacting with solar cells induce defects in the semiconductor lattice and, consequently, deteriorate the solar cell performance [3]. The performance degradation of solar cells subjected to energetic electrons and protons in laboratories is well characterized [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Hamache

Sengouga

Meftah

et al. 2016

Radiation Physics and Chemistry

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The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk (DA) and/or generation-recombination centers (GRC), it was found that, only one of them (the shallowest donor) is responsible for the anomalous degradation of . It will be also shown, by calculating the free charge carrier profile in the active region, that this behavior is not related to type conversion but to a widening of the space charge region.

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“…Therefore the short circuit current increases according to equation (3). The fourth region is when the short circuit falls sharply with increasing fluence.…”

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Hamache

Sengouga

Meftah

et al. 2016

Radiation Physics and Chemistry

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“…The damage associated with the irradiation with low-energy protons (150-270 keV) is clearly due to defects generated in the proximity of the p-n junctions, but it could be minimized by suitable protecting layers [47]. More recent results [48] of experiments carried out by irradiation with 1-MeV electrons, at temperature between 80 and 300 K of siliconbased and GaAs-based solar cells have shown that the silicon degradation is strongly temperature dependent, while it is almost temperature independent in GaAs solar cells. Meanwhile, it emerges that although the density of radiation-induced defects is larger in GaAs than in silicon; the defects in silicon are most effective recombination centers.…”

Section: Photovoltaic Cells For Space Vehicles and Satellite Applicationsmentioning

confidence: 99%

Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Pizzini

2012

Advanced Silicon Materials for Photovoltaic Applications

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This introductory chapter aims to present the unique potentialities of semiconductor silicon as the substrate or the component of a variety of devices that support the development of the society in which we live today and where our sons and daughters will live, hopefully, tomorrow; taking, however, as known all the very basic physics concerning the electronic and optical properties of semiconductor silicon as well as the basic concepts concerning silicon devices [1][2][3][4][5][6][7]. Also, considering the number of issues that should be taken into consideration to enlighten this critical role of silicon, only a few of these, selected in a very personal, and possibly not entirely objective, manner will be discussed in full detail.The discussion will start from the thermonuclear synthesis of silicon and will end with the properties and applications of silicon nanodots and nanowires studied today in research labs worldwide, with the consideration that silicon's uniqueness derives from its specific structural, physical and chemical properties, which make elemental silicon readily obtainable from widely diffused raw materials and directly suitable for technological applications in microelectronics, optoelectronics and photovoltaics, without neglecting high-power devices, chemical sensors and radiation detectors.The analysis will be focused on the variety of its structural forms, which range from single crystal towards microcrystalline, nanocrystalline and amorphous, with a discontinuous change of properties that, in fact, allow a multiplicity of applications.

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“…Several work articles have investigated the theoretical external factors dependence of solar cell output parameters and the analysis provided important information. The study of the influence of 1 MeV electron irradiation on electrical parameters of solar cell showed that radiation-induced defects are considered as recombination centers and lead to degradation of the open-circuit photovoltage V oc , the short-circuit photocurrent density Jsc, and the maximum power P m [3][4][5]. The study of the impact of irradiation on shunt resistance showed that it is reduced with increasing of particle fluences [6].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

Serge

Zouma

Korgo

et al. 2019

International Journal of Photoenergy

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The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.

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Deep space degradation of Si and GaAs solar cells

Cited by 10 publications

References 4 publications

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Silicon Science and Technology as the Background of the Current and Future Knowledge Society

Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell

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