Deep reactive ion etching of PMMA

Zhang, Congchun; Yang, Chunsheng; Ding, Duifu

doi:10.1016/j.apsusc.2003.11.050

Cited by 26 publications

(13 citation statements)

References 5 publications

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“…This is in itself an unusual observation and we suggest this may be related to etch product removal rate variation which is critical in these ultra-small topographies generated. It can also be seen that the introduction of fluorine deficient CHF 3 into the O 2 RIE which is often used for polymer etching results in improved selectivity and this can be suggested to be as a result of polymerization in the etch process [30]. Careful process control through flow rate control allows etch selectivity optimization.…”

Section: Resultsmentioning

confidence: 98%

Plasma etch technologies for the development of ultra-small feature size transistor devices

Borah¹,

Shaw²,

Rasappa³

et al. 2011

J. Phys. D: Appl. Phys.

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The advances in information and communication technologies have been largely predicated around the increases in computer processor power derived from the constant miniaturization (and consequent higher density) of individual transistors. Transistor design has been largely unchanged for many years and progress has been around scaling of the basic CMOS device. Scaling has been enabled by photolithography improvements (i.e. patterning) and secondary processing such as deposition, implantation, planarization, etc. Perhaps the most important of the secondary processes is the plasma etch methodology whereby the pattern created by lithography is ‘transferred’ to the surface via a selective etch to remove exposed material. However, plasma etch technologies face challenges as scaling continues. Maintaining absolute fidelity in pattern transfer at sub-16 nm dimensions will require advances in plasma technology (plasma sources, chamber design, etc) and chemistry (etch gases, flows, interactions with substrates, etc). In this paper, we illustrate some of these challenges by discussing the formation of ultra-small device structures from the directed self-assembly of block copolymers (BCPs) where nanopatterns are formed from the micro-phase separation of the system. The polymer pattern is transferred by a double etch procedure where one block is selectively removed and the remaining block acts as a resist pattern for silicon pattern transfer. Data are presented which shows that highly regular nanowire patterns of feature size below 20 nm can be created using etch optimization techniques and in this paper we demonstrate generation of crystalline silicon nanowire arrays with feature sizes below 8 nm. BCP techniques are demonstrated to be applicable from these ultra-small feature sizes to 40 nm dimensions. Etch profiles show rounding effects because etch selectivity in these nanoscale resist patterns is limited and the resist thickness rather low. The nanoscale nature of the topography generated also places high demands on developing new etch processes.

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Section: Resultsmentioning

confidence: 98%

Plasma etch technologies for the development of ultra-small feature size transistor devices

Borah¹,

Shaw²,

Rasappa³

et al. 2011

J. Phys. D: Appl. Phys.

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“…[12], the etch rate of PMMA using AJM at room temperature was on the order of 185 µm/min. Using deep reactive ion etching, for example, Zhang et al [52], reported the etch rate of PMMA to be 0.40 µm/min, when using a maximum power of 60 W, beyond which the material became distorted. Using an ArF excimer laser having a 193 nm wavelength and 100 mJ max power, Hsieh et al [53] found a PMMA etch rate of 10 µm/min.…”

Section: Abrasive Jet Micro-machining Of Polymersmentioning

confidence: 99%

Abrasive Jet Micro-Machining of Polymeric Materials

Hailu¹

2023

Preprint

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In the abrasive jet micro-machining (AJM) process, a jet of small particles is directed through an erosion resistant mask opening so that micro-sized features (i.e., micro-channels, holes, etc.) can be machined for the fabrication of micro-devices such as micro-fluidic and micro-electro-mechanical-systems (MEMS). Polymeric materials and elastomers have found applications in a wide variety of micro-devices. This thesis investigates the AJM of such materials, addressing the major challenges that must be overcome in order for the process to gain wider acceptance in industry. The thesis first presents a novel cryogenically assisted abrasive jet micro-machining (CAJM) technique that enables the micro-machining of elastomers such as polydimethylsiloxane (PDMS) that cannot be machined at room temperature. It was found that the erosion rate during CAJM is greatly increased, and the degree of particle embedment greatly decreased, compared to room temperature experiments. A finite element (FE) analysis was used to investigate the relationships between erosion, the heat transfer of the cooling jet and the resulting target temperature during the CAJM of channels in PDMS. The analysis illustrated the asymmetric nature of the cooling with much more cooling occurring towards the trailing edge of the jet. It was found that the predicted shape of the evolving machined surface profiles was improved significantly when a FE model was used to account for thermal distortion occurring during the CAJM process. An unwanted consequence of the AJM of polymeric materials was found to be particle embedding. Criteria leading to the embedding of spherical and angular particles in such materials were identified and modelled using rigid plastic analyses. It was found that the likelihood of embedding was proportional to the static coefficient of friction between the particle and the target for angular particles, and the depth of penetration for spherical particles. Scanning electron microscopy with EDX was used to measure the area coverage of embedded Al2O3 particles in polymers and elastomers, in order to evaluate various cleaning methods that were developed. It was found that glass bead blasting at 45˚ followed by the freezing technique was the best method to remove embedded particles, leading to 100% removal in some cases.

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“…Based on the literature data [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 , 77 ], Figure 2 plots of the technological limitations of various approaches to forming grooves in transparent materials or directly forming conductors on the substrate surface. The markers show the values of the width and depth of the groove’s or line’s height, obtained from the literature sources, and the lines show the t...…”

Section: The Analysis Of the Production Technologies Of Transparent Mesh Structuresmentioning

confidence: 99%

Optically Transparent and Highly Conductive Electrodes for Acousto-Optical Devices

et al. 2021

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The study was devoted to the creation of transparent electrodes based on highly conductive mesh structures. The analysis and reasonable choice of technological approaches to the production of such materials with a high Q factor (the ratio of transparency and electrical conductivity) were carried out. The developed manufacturing technology consists of the formation of grooves in a transparent substrate by photolithography methods, followed by reactive ion plasma etching and their metallization by chemical deposition using the silver mirror reaction. Experimental samples of a transparent electrode fabricated using this technology have a sheet resistance of about 0.1 Ω/sq with a light transmittance in the visible wavelength range of more than 60%.

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Deep reactive ion etching of PMMA

Cited by 26 publications

References 5 publications

Plasma etch technologies for the development of ultra-small feature size transistor devices

Plasma etch technologies for the development of ultra-small feature size transistor devices

Abrasive Jet Micro-Machining of Polymeric Materials

Optically Transparent and Highly Conductive Electrodes for Acousto-Optical Devices

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