Handbook of Silicon Based MEMS Materials and Technologies 2015
DOI: 10.1016/b978-0-323-29965-7.00021-x
|View full text |Cite
|
Sign up to set email alerts
|

Deep Reactive Ion Etching

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
27
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
5
4
1

Relationship

0
10

Authors

Journals

citations
Cited by 51 publications
(29 citation statements)
references
References 106 publications
2
27
0
Order By: Relevance
“…With no end-point detector for SiO 2 in the machine, the charged ions deflect at the insulator interface towards the silicon surface leading to a sideways etching. This phenomenon has been described by Laermer et al [28]. The SEM images demonstrate that the design can be fabricated with the above-described processing steps.…”
Section: µMsupporting
confidence: 67%
“…With no end-point detector for SiO 2 in the machine, the charged ions deflect at the insulator interface towards the silicon surface leading to a sideways etching. This phenomenon has been described by Laermer et al [28]. The SEM images demonstrate that the design can be fabricated with the above-described processing steps.…”
Section: µMsupporting
confidence: 67%
“…With no end-point detector for SiO in the machine, the charged ions deflect at the insulator interface towards the silicon surface leading to a sideways etching. This phenomenon has been described by Laermer et al [ 33 ]. The SEM images demonstrate that the design can be fabricated with the above-described processing steps.…”
Section: Fabricationsupporting
confidence: 60%
“…This method combines physical and chemical effects to remove material from a surface [12]. Figure 2.2 shows the difference in behavior between FF NTs and their nanofiber counterparts when exposed to RIE; while the NTs could tolerate up to 20 s of ion bombardment, the nanofibers were etched very quickly.…”
Section: Stability Of Diphenylalanine Nanostructuresmentioning
confidence: 99%