Deep levels in strongly Si-compensated GaAs and AlGaAs

Sato, Tadashige; Ishiwatari, Toshio

doi:10.1063/1.1462847

Cited by 4 publications

(4 citation statements)

References 20 publications

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“…The Fermi energy is shifted significantly towards the band edge-bulk GaAs has a band gap energy of 1.46 eV-indicating a high doping level or the presence of charged surface states [36]. Elemental analysis by energy dispersive x-ray spectroscopy (EDS) showed a significant presence of Si in the GaAs nanowires as a reaction by-product from the As(SiMe 3 ) 3 precursor (up to ∼10 20 cm −3 in [9]) and Si is a well-known n-type dopant for GaAs [37,38]. The room temperature carrier concentrations estimated from the measured values of the Fermi energy in table 1, using the relationship…”

Section: Thermally Generated Free Carrier Activation Energiesmentioning

confidence: 99%

Space charge limited currents and trap concentrations in GaAs nanowires

Schricker¹,

Davidson²,

Wiacek³

et al. 2006

Nanotechnology

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Electrical transport through individual solution-grown GaAs nanowires was measured as a function of temperature. The current–voltage (IV) curves are nonlinear and exhibit space charge limited currents. The IV curves become increasingly nonlinear with decreasing temperature and follow the scaling relationship . This scaling indicates that the space charge limited currents are limited by trapped charge. The characteristic energies of the trap states were estimated from the IV data and found to vary from wire to wire, ranging from 0.024 to 0.11 eV below the band edge. In the low bias region of the IV curves, where the curves were ohmic, the activation energy (related to the Fermi energy) was determined and found to be shifted significantly towards the band edge, which indicates either the presence of a large concentration of impurities, such as Si, in the nanowires or charged surface states.

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Section: Thermally Generated Free Carrier Activation Energiesmentioning

confidence: 99%

Space charge limited currents and trap concentrations in GaAs nanowires

Schricker¹,

Davidson²,

Wiacek³

et al. 2006

Nanotechnology

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“…Such acceptors have been observed in GaN [11], but their origins remain obscure. We cannot exclude the possibility that Si is substituting for N as well as Ga, thus acting like an acceptor or the formation of Si clusters with an acceptor character [12]. For the samples exhibiting metallic conductivity the presence of acceptors associated with the formation of V Ga Si Ga complexes is also possible.…”

Section: Resultsmentioning

confidence: 99%

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

et al. 2003

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We report on detailed temperature dependent, time-resolved photoluminescence (TRPL) studies of Si-doped AlGaN epilayers. In these samples, the Al concentration varies from 25% to 66%. The samples were found to exhibit metallic-like temperature-independent conductivity. The deep level "yellow" emission, whose presence would indicate the existence of a large number of defects associated with growth, Si incorporation, and/or alloy formation, is absent. In addition to emission corresponding to the donor-bound exciton, the PL spectrum exhibits features associated with transitions involving localized carriers. This assignment of the emission mechanisms is based on the activation energies extracted from the temperature dependent photoluminescence (PL) quenching. Specifically, at room temperature the PL spectrum is dominated by transitions involving localized states. The localization energy varied from sample to sample and was observed to be between 115 meV to 200 meV. The PL intensity decay in the lower Al mole fraction epilayers exhibits a slow component associated with the presence of donor-bound excitons.

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“…DX (deep-level complex) centers in doped AlGaAs [184][185][186] have been known to give rise to persistent photoconductivity [187][188][189]. The AlGaAs barrier layers of the CQW sample were designed as undoped layers, thus it remains unclear if the photoconductivity is related to DX centers.…”

Section: Transient Photocurrentmentioning

confidence: 99%

Spatially indirect excitons in coupled quantum wells

Lai¹

2004

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Deep levels in strongly Si-compensated GaAs and AlGaAs

Cited by 4 publications

References 20 publications

Space charge limited currents and trap concentrations in GaAs nanowires

Space charge limited currents and trap concentrations in GaAs nanowires

Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy

Spatially indirect excitons in coupled quantum wells

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