Space charge limited currents and trap concentrations in GaAs nanowires

Schricker, April D; Davidson, Forrest M.; Wiacek, Robert J.; Korgel, Brian A.

doi:10.1088/0957-4484/17/10/040

Cited by 83 publications

(74 citation statements)

References 39 publications

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“…[20][21][22] When the number of carriers injected from contacts is greater than the free carriers in the semiconductors, the current is limited by the buildup of injected space charge. Since SCLC is sensitive to the density of trap states, and their energy depth, [ 23 ] it can be prominently observed 2D structures with large surface to volume ratio.…”

Section: Communicationmentioning

confidence: 99%

Controlled Synthesis of Single‐Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Vabbina

Karabiyik

Al-Amin

et al. 2013

Part & Part Syst Charact

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www.particle-journal.com www.MaterialsViews.com COMMUNICATIONsubstrates for 2D morphology-controlled ZnO nanostructure growth. Graphene is a 2D carbon nanostructure, which has been studied extensively in recent years due its remarkable mechanical, optical, and electronic properties. [ 13 ] These properties makes graphene a promising candidate for many potential applications including electronic and optical devices. Graphene electrodes with nanostructures can also be applied as synergistic electrodes for different fl exible and transparent conducting devices. The growth mechanism of the synthesized 2D ZnO nanostructures is studied in detail with the help of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED). Based on the data, we believe that ZnO nanofl akes are oriented along (0001) plane and grow laterally along (0110) plane. Furthermore, the electrical and optical data show excellent conduction and transmission properties, respectively. Our synthesis method is a low-cost, low-temperature, scalable, and potentially high-throughput process, which can be further extended for the synthesis of wide range of other 2D materials for different applications in electronics and optoelectronics devices.We used zinc nitrate hexahydrate [ZNH; Zn(NO 3 )·6H 2 O] and hexamethylenetetramine [HMT; (CH 2 ) 6 ·N 4 ] (both from SigmaAldrich) for the sonochemical synthesis of ZnO nanofl akes. [ 12 ] ZNH provides Zn 2+ ions and H 2 O molecules in the solution provide O 2− ions. HMT has been used as a shape-inducing polymer in ZnO nanowire growth as polymer as it attaches to the nonpolar facets of ZnO cutting the supply of Zn 2+ ions, thus allowing the growth of ZnO in only <0001> direction. [ 14 ] However, the shape of the nanostructures strongly depends on the concentration of ZNH/HMT solutions, which affects the precipitation mechanism of the oxide. [ 15,16 ] It was observed that as the concentration of ZNH/HMT aqueous solution increased, the length of the ZnO nanorods decreased. [ 15 ] In the present case, the concentration of the precursors is increased by 10-20 times and the sonication amplitude is increased by 20% compared with the earlier process. [ 12 ] The process temperature does not exceed 70 ° C, as amplitude of the sonication is increased. At the higher concentrations used in this process and fast reaction rates achieved under sonication, HMT releases large amounts of OH − and NH 4 + ions in a short period of time. At this higher concentrations, precipitation of Zn 2+ ions occurs at faster rate than required for HMT-assisted oriented growth of ZnO nanostructures, [ 14,15 ] resulting in growth of nonpolar planes of ZnO along with polar (0001) plane forming parallelogram-shaped 2D ZnO nanofl akes.Figure 1 a,b shows the SEM pictures of the ZnO nanofl ake growth on Si substrate at 30 s and 1 min. 2D ZnO nanofl akes grow from sheet structures to hexagonal crystal structure, Semiconductor nanostructures have attracted considerable research i...

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Section: Communicationmentioning

confidence: 99%

Controlled Synthesis of Single‐Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Vabbina

Karabiyik

Al-Amin

et al. 2013

Part & Part Syst Charact

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“…The SCLC approach to study the characteristic parameters of individual nanowires, such as concentration of charge traps and their activation energy, from current-voltage characteristics has been discussed recently. [12][13][14][15] Bismuth sulfide (Bi 2 S 3 ) is a direct band gap semiconductor (E g -1.3 eV) with n-type conduction. It has a great potential for application in resistive memory devices due to its specific intrinsic doping with sulfur vacancies that can play a key role in resistive switching.…”

Section: Introductionmentioning

confidence: 99%

Space charge limited current mechanism in Bi2S3 nanowires

Kunakova

Viter

Abay

et al. 2016

Journal of Applied Physics

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Original citationKunakova, G.; Viter, R.; Abay, S.; Biswas, S.; Holmes, J. D.; Bauch, T. We report on the charge transport properties of individual Bi 2 S 3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures. V C 2016 AIP Publishing LLC.

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“…Along with presence of adsorbates and charged surface states [5,6], other factors that may affect the conductivity include the (i) reduced mobility due to enhanced phonon or surface scattering [7,8], (ii) edge effects due to unsaturated bonds of the surface atoms [9], (iii) size-imposed limits to the effective doping concentration [9,10], (iv) size-dependence of depletion width [11], band-gaps [12,13], and recombination barriers [14]. As a result, significant scatter in the conductivity data are observed for individual GaAs NWs purportedly fabricated in the same manner [15].…”

Section: Introductionmentioning

confidence: 99%

Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires

et al. 2010

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Contactless monitoring with photoelectron microspectroscopy of the surface potential along individual nanostructures, created by the X-ray nanoprobe, opens exciting possibilities to examine quantitatively size-and surface-chemistry-effects on the electrical transport of semiconductor nanowires (NWs). Implementing this novel approach-which combines surface chemical microanalysis with conductivity measurements-we explored the dependence of the electrical properties of undoped GaAs NWs on the NW width, temperature and surface chemistry. By following the evolution of the Ga 3d and As 3d core level spectra, we measured the positiondependent surface potential along the GaAs NWs as a function of NW diameter, decreasing from 120 to ~20 nm, and correlated the observed decrease of the conductivity with the monotonic reduction in the NW diameter from 120 to ~20 nm. Exposure of the GaAs NWs to oxygen ambient leads to a decrease in their conductivity by up to a factor of 10, attributed to the significant decrease in the carrier density associated with the formation of an oxide shell.

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Space charge limited currents and trap concentrations in GaAs nanowires

Cited by 83 publications

References 39 publications

Controlled Synthesis of Single‐Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Controlled Synthesis of Single‐Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Space charge limited current mechanism in Bi2S3 nanowires

Contactless monitoring of the diameter-dependent conductivity of GaAs nanowires

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