Deep levels in semiconductors: A quantitative criterion

Jantsch, W.; Wünstel, K.; Kumagai, Osamu; Vogl, P.

doi:10.1103/physrevb.25.5515

Cited by 49 publications

(11 citation statements)

References 19 publications

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“…The work of Ref 60. further includes a comparison of the Au stress derivatives with measured derivatives for the shallow level of the As-doped sample with results that fully corroborates the analogous results of Ref 91…”

supporting

confidence: 76%

“…Among the early hydrostatic-pressure studies are the work of Jantsch et al 91 who measured the pressure coefficients of the A and B levels in silicon of S, Se, and Te and found values comparable to those of the energy gap and about 100 times larger than those expected for effective-mass shallow levels. The authors pointed out that the size of the pressure coefficient may be taken as an alternative (or better) criterion fur classification of a level as being deep as opposed to shallow.…”

Section: Hydrostatic Pressure Applicationsmentioning

confidence: 99%

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Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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We present a comprehensive review of implementation and application of Laplace deep-leve1 transient spectroscopy (LDLTS). The various approaches that have been used previously for high-resolution DLTS are outlined and a detailed description is given of the preferred LDLTS method using Tikhonov regularization. The fundamental limitations are considered in relation to signal-to-noise ratios associated with the measurement and compared with what can be achieved in practice. The experimental requirements are discussed and state of the art performance quantified. The review then considers what has been achieved in terms of measurement and understanding of deep states in semiconductors through the use of LDLTS. Examples are given of the characterization of deep levels with very similar energies and emission rates and the extent to which LDLTS can be used to separate their properties. Within this context the factors causing inhomogeneous broadening of the carrier emission rate are considered. The higher resolution achievable with LDLTS enables the technique to be used in conjunction with uniaxial stress to lift the orientational degeneracy of deep states and so reveal the symmetry and in some cases the structural identification of defects. These issues are discussed at length and a range of defect states are considered as examples of what can be achieved in terms of the study of stress alignment and splitting. Finally the application of LDLTS to alloy systems is considered and ways shown in which the local environment of defects can be quantified.

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supporting

confidence: 76%

Section: Hydrostatic Pressure Applicationsmentioning

confidence: 99%

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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“…1 requires very wide barriers (small wl and 01~). The geometrical barrier height E, for ml = co2 is E , = 4 Ere1 11 -(Bth/Erel)l2 7 (12) and its pressure dependence is usually due to Eth(p) Fig. 1 suggest that the situation is more complicated.…”

Section: The Effect Of Pressure On Energy Barriersmentioning

confidence: 98%

“…Here we note that the value of the pressure coefficient of the level, y , may help to distinguish between shallow (Iy < 0.001 meV/MPa) and deep (Iyl < 0.20 meV/MPa) impurity states [12]; b) the relative shift of various levels of the same impurity. This will cause a relative change of population of these levels and in some cases a "repulsion" of levels of the same symmetry may be observed due to the non-crossing rule; c) the relative shift of energy levels of different impurities.…”

Section: The Effect Of Pressure On Level Energiesmentioning

confidence: 99%

The Effect of Pressure on Deep Impurity States with Large Lattice Relaxation

Porowski

Trzeciakowski

1985

Physica Status Solidi (b)

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“…Deep states, on the other hand, 'can be thought as composed from many band states and thus they do not follow any particular band. Consequently, their activation energy can change strongly under pressure [24].…”

Section: Energy Transfer and Temperature Induced Quenching Of The Lmentioning

confidence: 99%

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Jantsch

Przybylińska

1996

Acta Phys. Pol. A

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The trivalent erbium ion emits at 1.54 gm, independent of the host crystal and temperature. This fact makes Si : Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.

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Deep levels in semiconductors: A quantitative criterion

Cited by 49 publications

References 19 publications

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

The Effect of Pressure on Deep Impurity States with Large Lattice Relaxation

Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

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