Erbium in Silicon: Possible Light Source for 1.5 μm and Challenge for Defect Physics

Abstract

The trivalent erbium ion emits at 1.54 gm, independent of the host crystal and temperature. This fact makes Si : Er an interesting candidate for integrated optics in the optimum wavelength regime for fiber optic communication systems. Recent progress in improving the luminescence yield is reviewed and the limiting factors are discussed, namely: the low solubility of different Er centers, thermal quenching of the luminescence above 100 K, the mechanisms for energy transfer from the host crystal to the Er 4f shell and the process induced parasitic recombination channels.