Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys

Omling, P.; Samuelson, Lars; Grimmeiss, H. G.

doi:10.1063/1.332733

Cited by 203 publications

(74 citation statements)

References 9 publications

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“…Hence the transients are analyzed with the double-boxcar method. 30,31 The work cycle is repeated for different temperatures and results in a temperature-dependent curve, which shows maxima at those temperatures where the emission time constant coincides with the reference time constant τ ref . The DLTS spectra for the QD sample and the WL sample are shown in Fig.…”

Section: B Conventional Dltsmentioning

confidence: 99%

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

et al. 2012

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Hayne, M. (2012). Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. Physical Review B, 86(3) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at: openaccess@tue.nl providing details and we will investigate your claim. We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (∼100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k·p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.

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Section: B Conventional Dltsmentioning

confidence: 99%

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

et al. 2012

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“…For example, Kimerling and Patel [6] found asymmetrically broadened DLTS lines associated with dislocations in Si, which survived at high temperatures. Anomalous symmetrical line broadening was also studied by Omling et al [7,8]. They observed a deep electron trap in GaAs1-xPx ternary compound caused by so-called alloy broadening and after plastic deformation of Si.…”

Section: Analysis Of Dlts Measurements In Case Of Extended Defectsmentioning

confidence: 94%

“…dislocations) DLTS data cannot be interpreted unambiguously [5]. According to the authors [6][7][8], the DLTS lines usually show characteristic symmetric or asymmetric broadening connected with a non-exponential transient of electron emission from the traps. For example, Kimerling and Patel [6] found asymmetrically broadened DLTS lines associated with dislocations in Si, which survived at high temperatures.…”

Section: Analysis Of Dlts Measurements In Case Of Extended Defectsmentioning

confidence: 99%

“…Temperature scans for several lock-in frequencies made possible to construct the Arrhenius plots for each DLTS signal peak (Fig 2). It has been shown [7] that the thermal emission rate (e n ), and the mean value of the thermal activation energy (E a ) are still directly obtainable although DLTS peaks are distorted. The application of the standard least-squares fitting procedure yielded the values of activation energies E a and capture cross-sections σ n .…”

Section: 1lock-in Dlts Measurementsmentioning

confidence: 99%

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Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

et al. 2004

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Two deep traps associated with lattice-mismatch induced defects in n-type In 0.042 Ga 0.958 As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.

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“…6(c) mean non-exponential response compared to the classical case of DLTS spectra for a point defect, so the interpretation of data should be considered more carefully. Broad shape and increasing amplitude of peaks can be due to different causes: local fluctuations in the composition of the compounds, 43 overlap of responses from several discrete defect levels with small separation in energy, defects having an energy density of states (e.g. Gaussian distribution, extended defects with unknown energy distribution), dislocations, etc.…”

Section: à3mentioning

confidence: 99%

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

Baranov

Gudovskikh

Kudryashov

et al. 2018

Journal of Applied Physics

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The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7–12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm−3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm−3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm−3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3–5) × 1015 cm−3, while the concentration of deep levels becomes 1.3 × 1015 cm−3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

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Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys

Cited by 203 publications

References 9 publications

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

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