Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si

Abstract

Articles you may be interested inA deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes Appl. Phys. Lett. 96, 103507 (2010); 10.1063/1.3358140 Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopyDeep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400°C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related.

Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles

“…Notably, deep energy levels at E C − 0.22, E C − 0.24 eV, and E V + 0.18 eV have been reported in NGI implanted Si [25]. Apart from our studies [26][27][28][29][30], the investigation in [25] is, to the best of our knowledge, the only other investigation of NGI induced deep levels in silicon. Section 3.2.2 discusses the electrical properties of defects created in n-type Si following implantation with low energy hydrogen ions [31].…”

“…Self-implantation was used in order to exclude any chemical effects related to NGIs during defect creation. The fluence of alpha particles was 1 × 10 12 cm −2 at a flux of 7.1 × 10 6 cm −2 s −1 , while the 28 Si ion fluence was 1 × 10 9 cm −2 (HOC-Si) or 2 × 10 10 cm −2 (LOC-Si) at a flux of 1 × 10 9 cm −2 s −1 [26][27][28][29]. It is worthwhile noting that the nomenclature used here to distinguish between the two sets of Si samples containing different concentrations of O and C has been changed from that in [26] for better readability.…”

“…The 'signatures' (i.e. energy level, E T , and apparent capture cross section, σ a ), of the prominent electron traps were determined from DLTS Arrhenius plots of log(e n /T 2 ) versus 1/T [26], and are summarized in table 2. DLTS peaks which have similar 'signatures' and annealing behaviours are listed in the last column of table 2.…”

Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

“…In previously fabricated Si + -implanted devices, the energy was chosen to place the peak of the defect density in the center of the waveguide [24] resulting in a large portion of the Si ions in the substrate. However, since the vacancies are highly mobile at the annealing temperatures used in [20], a nearly uniform distribution of defects and Ar ions throughout the channel section of the waveguide was expected after the annealing process. The exact ion energies and doses chosen for the implantation step were based on prior reports of ion-induced defects [12,23,24] and Stopping Range of Ions in Matter (SRIM) calculations [25].…”

“…To date, the majority of these PDs have relied upon the Si divacancy defect for detection. However, overcoming the low thermal stability of the Si divacancy [20][21][22][23][24] remains a challenge for integrating these devices due to the low thermal processing budget after ion implantation; this low thermal budget limits any form of additional fabrication processing. Recently, Ar + implantation has been shown to have higher thermal stability than devices relying upon the divacancy defect [23], and has the potential to alleviate the thermal stability issues while providing a route to a monolithic Mid-IR detection for silicon photonics.…”