Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

Abstract

Abstract:Complementary metal-oxide-semiconductor (CMOS)-compatible Ar + -implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%-3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350˝C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si + -implanted devices and achieve higher responsivity after annealing up to 350˝C.

Mid-infrared integrated photonics on silicon: a perspective

“…Figure 14 illustrates the basic geometry and spectral response of a Zn-implanted p-i-n detector device seamlessly embedded in an SOI waveguide. Ion implantation also creates lattice defects with optically active trap states such as divacancies, and Si + and Ar + implanted SOI waveguide detectors belong to this category [181,183]. These detectors are fully compatible with standard CMOS fabrication and do not necessitate the introduction of foreign materials in the Si platform.…”

Integrated photonic materials for the mid‐infrared

“…These photodetectors are fully compatible with standard CMOS process, however, the major limitations of these detectors is their low temperature operation to reduce the thermal noise arising from the transition between close lying energy levels. While Si has bandgap of 1.12 eV but sub‐band gap absorption in the mid‐IR can be introduced either by doping or by forming lattice defects using deep level dopants such as Zn, Ar, Au, S, and Se etc 115,120–123 . Alternatively, energetic ion bombardment can also create lattice point defects with optically active trap states in the bandgap 124 .…”

“…The detector is shown in Figure 2C. Souhan et al 120 studied the linearity, responsivity and thermal stability of Ar + implanted monolithic integrated Si waveguide photodetectors over 2.2‐2.3 μm wavelength range. Results from this study showed a peak responsivity between 20 and 25 mA/W using a reverse bias of 5 V. Recently, incorporation of chalcogenides into Si using femtosecond laser ablation and ion implantation followed by pulsed laser melting have also attracted lot of attention.…”

“…While Si has bandgap of 1.12 eV but sub-band gap absorption in the mid-IR can be introduced either by doping or by forming lattice defects using deep level dopants such as Zn, Ar, Au, S, and Se etc. 115,[120][121][122][123] Alternatively, energetic ion bombardment can also create lattice point defects with optically active trap states in the bandgap. 124 For the 1.9-2.5 μm wavelength range Si + , Zn + , Ar + , B + dopants have been widely used to produce defect levels in Si, and planar photoconductive detectors based on these dopants have been previously reported.…”

Design of High-Speed Mid-Infrared Electro-Optic Modulator Based on Thin Film Lithium Niobate

“…Park et al demonstrated the all-optical modulation of self-standing porous. Correspondingly, it is worth mentioning that Si + and Zn + ion-implanted silicon photodetectors (PDs) can obtain 1.7GHz 3 dB bandwidth [16]- [18]. Recently, silicon-graphene hybrid plasmonic waveguide PD operating at 2 μm has a bandwidth of >20 GHz [19].…”