Deep level transient spectroscopy analysis of fast ion tracks in silicon

Hallén, Anders; Sundqvist, B. U. R.; Paska, Z. F.; Svensson, B. G.; Rosling, M; Tirén, J

doi:10.1063/1.345702

Cited by 63 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Following from available experimental results, 21 the radiation defect density at a depth of ഛ5 m is expected to be about 10 13 cm −3 . Using known 22 capture cross sections of holes by the oxygen-vacancy and divacancy defects, we can estimate the diffusion length of holes to be about 5 m. Therefore, one can expect that the hole concentration during steady-state injection pulses decreases 50-100 times along the damaged region ͑see curve 2 in Fig. 6͒.…”

Section: Discussionmentioning

confidence: 97%

Reactions of interstitial carbon with impurities in silicon particle detectors

Макаренко

Moll

Korshunov

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

We present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. We compare our results with data published in previous works and point out some possible misinterpretation of DLTS data due to detector processing induced inhomogeneous distribution of impurities. Finally, we present a method to determine the absolute concentration of the oxygen and carbon impurities as functions of depth in devices by carefully analyzing the carbon interstitital annealing kinetics.

show abstract

Section: Discussionmentioning

confidence: 97%

Reactions of interstitial carbon with impurities in silicon particle detectors

Макаренко

Moll

Korshunov

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…This latter level originates from a defect already present in small concentration directly after implantation in the CZ samples and which then gradually increases with annealing up to 300°C. In accordance with previous notations, 9,41 we label this level as E3. A similar isochronal annealing study for the FZ samples yields different results compared to those in Fig.…”

Section: ϫ3mentioning

confidence: 99%

“…However, for ion implantation only a few quantitative studies of the point-defect generation exist, [9][10][11][12][13] and the defects primarily investigated are the divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers. V 2 and VO are the most prominent vacancy-related defects in silicon after low-dose ion bombardment at room temperature ͑RT͒ and their formation has been studied as a function of ion mass, dose, dose rate, sample depth, and implantation temperature.…”

Section: Introductionmentioning

confidence: 99%

“…These two centers dominate the majority carrier spectrum for n-type samples and are normally the prime defects after implantation at low doses, together with the interstitialcarbon-interstitial-oxygen complex (C i O i ) having a level at ϳ0.35 eV above the valence-band edge 7,32,33 ͑not shown here͒. The apparent deviation from a 1:1 ratio between the singly negative (V 2 Ϫ ) and doubly negative charge state (V 2 2Ϫ ) of V 2 is a characteristic feature of ion bombardment, 9,34 together with a highly nonexponential capture rate of the E C Ϫ0.23 eV level as a function of the fillingpulse duration.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

Self Cite

View full text Add to dashboard Cite

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

show abstract

“…Its doubly negative charge state, V 2 (= /−), was identified due to its 1:1 correlation with the singly negative charge state (V 2 (−/0)) after electron irradiation [26]. However, a deviation from this 1:1 correlation was observed, when bombarding with protons and α-particles [27], and heavier ions [28]. Several models were introduced to explain this deviation, including (i) strain in the heavy ion collision cascades preventing the motional averaging of the V 2 state favoring…”

Section: Motivationmentioning

confidence: 97%