Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET

Panda

Int J Numerical Modelling

et al. 2021

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Section: Resultsmentioning

confidence: 99%

DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: Drain and pocket engineering technique

Panda

Int J Numerical Modelling

et al. 2021

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“…26 It is also reported that RF/analog and linearity behavior of DG TFET is suppressed with rise in σ value. 27,28 Over course of time, analysis on effect of σ on RF/analog characteristic are presented in gate modulated 29 and hetero-stacked TFETs. 30 Recently, the effect of source/drain gradient for the variation in lateral straggle parameter in terms of DC and RF performance is highlighted in Ge epitaxial DG TFET.…”

Section: Introductionmentioning

confidence: 99%

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Panda

Int J RF Mic Comp-Aid Eng

et al. 2021

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The diffusion of doping concentration in source/drain regions through ion implantation technique extents to the channel, which decreases the inversion portion of channel and results in variation of device behavior. In this paper, by merging the advantages of Ge‐source TFET and dual material gate (DMG) TFET, a new device named as Ge‐source dual material double gate (DMDG) TFET is proposed. We have investigated DC parameters like drain current vs gate bias, drain current vs drain bias, subthreshold swing (SS), and current ratio (ION/IOFF) by changing the lateral straggle parameter (σ) from 0 to 5 nm through TCAD device simulator in proposed TFET. The RF/analog behavior like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), total gate capacitance (Cgg), cut‐off frequency (fc), transconductance generation factor (TGF), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are reported for different σ values in proposed TFET. It is found that both DC and RF/analog figure of merits are a function of σ. It is perceived that ION as well as RF/analog characteristics are improved, whereas, short channel parameter degrades with increase in σ. Finally, the effect of σ on noise performance and s‐parameters are highlighted in proposed device.

“…A gate modulated (GM)-TFET having ETL with improved ON current for the variation in gate and drain bias is reported [16]. The source/drain lateral straggle (σ) influence on analog and high frequency performance of GM-TFET is investigated in literature [17]. Also, the linearity performance of GM-TFET for the variation of σ parameter is highlighted [16].…”

Section: Introductionmentioning

confidence: 99%

Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)

Bhowmick

et al. 2021

Silicon

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This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (t epi ) and doping concentration (N epi ) are varied and their impact on device electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), and threshold voltage (V T ) is highlighted. It is observed that both t epi and N epi significantly influence the different electrical parameters of the ETL based TFET architecture.