Deep Etched ZnSe‐Based Nanostructures for Future Optoelectronic Applications

Abstract

By electron beam lithography and a subsequent wet/dry etch process, optically active nanostructures are developed based on ZnSe with lateral extensions down to 35 nm. Dry etching using Ar+ ions is found to generate very smooth etch surfaces, while the photoluminescence efficiency of narrow wires is much higher in wet chemically etched structures. As a first application of deep etched nanostructures, index coupled distributed feedback laser structures of second order are realized with periods down to 185 nm on the base of (Cd, Zn)Se/ZnSe/(Mg, Zn)(Se, S) vertical waveguide heterostructures. A clear correlation between the resonator period and the emission wavelength is observed, indicating a high coupling coefficient of the structures. For optical pumping using a pulsed NJaser, the laser threshold at room temperature is about 100 kW/cm2.

Photoluminescence and photoluminescence excitation studies of lateral size effects inZn1−xMnxSKlar1, Wolverson2, Davies3 et al. 1998Phys. Rev. B151120View full textAdd to dashboardCite

“…However, to reduce the diameter of the Qdots to 100 nm, wet-chemical etching was used as an additional step before the removal of the Ti-protection mask. The etchant used was a solution of bromine and ethylene glycol with a solution ratio of Br 2 :HOCH 2 CH 2 OH of 2:1000 [4]. Figure 2 shows an SEM image of the 100 nm Q-dot sample before the removal of the Ti-protection mask.…”

Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching

“…4 In wide band gap II-VI semiconductors, quantum dots have been realized as nanocrystallites embedded in glass or gel matrices. 14 In this article, we report on the fabrication of Cd x Zn 1Ϫx Se/ZnSe quantum wires and quantum dots. Electron beam lithography provides a very high flexibility in the design of nanostructured systems.…”

Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wires

“…This was shown recently in the CdZnSe/ ZnSe material system. 13 In this letter we report on the fabrication and characterization of semiconductor wires based on CdTe/ Cd 1Ϫx Mg x Te quantum wells. The wires have been realized using electron beam lithography and a subsequent wet chemical etching step.…”