Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wires

Abstract

Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells

Recombination dynamics in dry-etched (Cd,Zn)Se/ZnSe nanostructures: Influence of exciton localization

“…In deep etched wires and dots, the reduction of the exciton lifetime and the normalized PL intensity with decreasing size is usually explained by a diffusion of free excitons to the sidewalls followed by a nonradiative recombination process at the surface. [9][10][11][13][14][15][16][17][18] This picture is confirmed by experimental data, e.g., for GaAs/͑Al,Ga͒As wires 14,16 and dots, 18 ZnSe/Zn͑Se,S͒ wires, 17 and CdTe/͑Cd,Zn͒Te wires. 10 However, there are recent reports on ͑Cd,Zn͒Se/ZnSe wire structures, 17,19 where the recombination lifetime observed in time-resolved PL spectroscopy remains approximately constant even if the lateral size is reduced down to 20 nm.…”

“…Even for II-VI materials, this process is well established now, allowing a flexible control of size and geometry in wire and dot structures. [9][10][11][12] For this kind of nanostructure, another aspect of surfaces plays an important role: Excitons can recombine nonradiatively via surface states. In deep etched wires and dots, the reduction of the exciton lifetime and the normalized PL intensity with decreasing size is usually explained by a diffusion of free excitons to the sidewalls followed by a nonradiative recombination process at the surface.…”

Control Cell Behavior on Physical Topographical Surface

“…One kind is formed by the bulk-like modes, including the confined modes and the half space modes; the other kind is formed by the interface modes. The electric field induced by each phonon mode is normalized via the integral [19] dr|∇ (r)| 2 β i =h ω 2ε 0 (6) with β i = ω 2 ∂εi ∂ω . In planar microstructures, the electric potential has the form of q (r) = 1 √ S φ q (z)e iq·ρ , with q being the phonon mode wavevector in the x-y-plane.…”

“…Since 1977, when Kamarov et al [3] first reported the giant enhancement of magnetic-optical effects in Cd 1−x Mn x Te, much effort has been directed towards the understanding of the physics underlying the unusual phenomena associated with these special semiconductors. As its non-magnetic counterpart, Cd 1−y Mg y Te has attracted much attention [4,5], due to their similarities in crystalline and electronic properties, and, as a consequence, the feasibility of the fabrication of structures such as quantum wells, quantum wires and dots [6]. For this reason, with the development of the technology of molecular beam epitaxy, microstructures of DMS/nonmagnetic semiconductors, built with the constituents CdTe, Cd 1−x Mn x Te, Cd 1−y Mg y Te, and the quaternary alloy Cd 1−x−y Mn x Mg y Te, have been grown, and their magnetooptic properties have been well explored.…”

Development of CdTe/Cd1-xMgxTe Double Barrier, Single Quantum Well Heterostructures for Resonant Tunneling

“…Thus the quateuary system CdMgMnTe provides the unique possibility to alter separately the electronic and magnetic properties in a heterostructure. In addition, this material system is suitable for the fabrication of quantum wires and dots [15]. Photoluminescence intensity from low-dimensional, deep etched stuctures turned (885) …”