Deconvolution analysis of dopant depth profile of Si at AlGaAs/GaAs interface using Al composition profile as reference

Kawashima, Yoshiya; Ide, Takashi; Aoyagi, Satoka; Kudo, Masahiro

doi:10.1016/j.apsusc.2004.03.076

Cited by 5 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) Nowadays, device size is scaled down, which requires considerable effort on the improvement of SIMS apparatuses, in order to realize high sensitivity, high lateral resolution and in-depth resolution. 1,2) However, depth resolution is governed by several phenomena inherent to the action of the primary ion in the substrate and their incorporation in the matrix. The main physical mechanism responsible for the degradation of depth resolution is collisional mixing.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, recent years have seen the development of several deconvolution algorithms that show an improvement in depth resolution without taking into account noise effects. [2][3][4][5][6] Indeed, the consequence of noise in numerical processing is the generation of artifacts and oscillations that limit the accuracy of results and their interpretations. Moreover, none of these algorithms have been used widely because the calculations are typically complicated and time-consuming.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

Boulakroune

Oualkadi

Benatia

et al. 2007

jjap

View full text Add to dashboard Cite

In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysis by a new approach based on partial deconvolution combined with scale-frequency shrinkage. The SIMS profiles are obtained by analysis of the delta layers of boron doped silicon in a silicon matrix, analyzed using Cameca-Ims6f at oblique incidence. These profiles can be approximated closely by exponential-like tail distributions with decay length, which characterizes the collisional mixing effect. The partial deconvolution removes the residual ion mixing effect. The contributions of high-frequency noise are removed by shrinkage to a great extent of the profiles. It is shown that this approach leads to a marked improvement in depth resolution without producing artifacts and aberrations caused principally by noise. Furthermore, it is shown that the asymmetry of the delta layers, caused by the collisional mixing effect, is completely removed, the decay length is decreased by a factor of 4 compared with that before deconvolution.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

Boulakroune

Oualkadi

Benatia

et al. 2007

jjap

View full text Add to dashboard Cite

show abstract

“…Depth profiles of Si in AlGaAs/GaAs epilayers could be deconvoluted without RM. 325 The atomic level abruptness of the Al concentration at the interface was confirmed to be within 0.5 nm using thickness fringe-field TEM. The DRF derived from the Al profile using 2 keV Cs 1 bombardment and detection of AlAs À ions allowed the true Si distribution to be calculated from the AsSi À signals.…”

Section: Quantitative Analysismentioning

confidence: 86%

Atomic spectrometry update. Atomic mass spectrometry

Bacon¹,

Linge

Vaeck

2005

J. Anal. At. Spectrom.

View full text Add to dashboard Cite

“…So, the interfacial effect exists between the different layers, such as the adjacent layers of glass-Si 3 N 4 , Si 3 N 4 -Ga 0.5 Al 0.5 As and Ga 0.5 Al 0.5 As-GaAs. [19,20] Due to the discrepancy of material performance, inter-diffusion of different kinds of particles has been observed. Specifically, a similar interface makes Al-ion diffuse gradually between the Ga 0.5 Al 0.5 As and GaAs layers.…”

Section: Mechanism Analysismentioning

confidence: 99%

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

赵静¹,

常本康²,

熊雅娟³

et al. 2011

Chinese Phys. B

View full text Add to dashboard Cite

A transmission-mode GaAs photocathode includes four layers of glass, Si 3 N 4 , Ga 1−x AlxAs and GaAs. A gradientdoping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spectrophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition, a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error, meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness, layer interface effects and surface oxides is interpreted on the modification.

show abstract

Deconvolution analysis of dopant depth profile of Si at AlGaAs/GaAs interface using Al composition profile as reference

Cited by 5 publications

References 8 publications

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

Atomic spectrometry update. Atomic mass spectrometry

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

Contact Info

Product

Resources

About