Dealy Time Analysis of Combined CMOS Ring Oscillator

Biabanifard, Sadegh; Largani, S. Mehdi Hosseini; Asadi, Shahrouz

doi:10.14810/elelij.2015.4205

Cited by 11 publications

(6 citation statements)

References 6 publications

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“…As there are only a few studies on plastic substrates, ring oscillators fabricated on rigid substrates were also considered. Because fROSC is approximately proportional to VDD 47 , different devices were compared by converting VDD to 10 V and the corresponding tp after conversion was defined as tp(10V). Notably, the hybrid ring oscillator in the present study exhibited the fastest operation speed (i.e., the smallest tp) among the reports.…”

Section: Resultsmentioning

confidence: 99%

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

Watanabe¹,

Wei²,

Kumagai³

et al. 2021

Preprint

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Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

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Section: Resultsmentioning

confidence: 99%

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

Watanabe¹,

Wei²,

Kumagai³

et al. 2021

Preprint

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“…As there only a few studies on flexible substrates, ring oscillators fabricated on rigid substrates were also added to the list (Table 1). Because the frequency of a ring oscillator is approximately proportional to VDD 50 , different devices were compared by converting VDD to 10 V and the corresponding propagation delay after conversion was defined as tp(10V).…”

Section: We Compared Several Complementary Ring Oscillators Based On mentioning

confidence: 99%

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Inorganic Transistors

Wei¹,

Kumagai²,

Makita³

et al. 2021

Preprint

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Printed electronics offer a cost-efficient way to realise flexible electronic devices. The combined use of p-type and n-type semiconductors would yield silicon-like integrated circuits with low power consumption and stability. However, printing complementary circuits is challenging due to a lack of suitable material systems. To counter this, we employed a hybrid system to integrate p-type organic semiconductors (OSCs) and n-type amorphous metal oxide semiconductors (MOSs). These damage-free patterned OSC- and MOS-based thin-film transistors with improved process durability allowed the fabrication of hybrid complementary circuits on flexible substrates. These inverters functioned well even after exposure to air for 5 months. A large noise margin and power gain of 38 were realised with a supply voltage as low as 7 V. Furthermore, a five-stage ring oscillator with a stage propagation delay of 1.3 µs was achieved, which is the fastest operation ever reported for printed, flexible complementary inverters.

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“…Also in order to overshoot reduction in charge transferring phase, an intermediate phase is exploited in Biabanifard, Largani, and Asadi . The added phase, charge load capacitor with a lower rate compared with I 1 .…”

Section: Conventional Cbsc Integratormentioning

confidence: 99%

“…In fact, input part of these circuits is a sample and hold circuit, which in simplest form consists of four switches, a single sampling capacitor and at least two noncovering clocks. Some simple and efficient techniques to produce high‐quality clocks are presented in Biabanifard, Largani, and Asadi and Parsan and Ayatollahi and Mortazavi, Nabavi, and Amiri, which can be used to generate clocks for these circuits. Additionally, the first ∆∑ analog to digital converter using CBSC technique is presented in which include dying fabrication.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear current source charge scheme for comparator based switched capacitor integrator

Valianpour¹,

Chaharmahali

Biabanifard³

2019

Int J Numerical Modelling

Self Cite

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The continuous development of complementary metal-oxide-semiconductor (CMOS) technology makes it difficult to design high speed and low power amplifiers. One of the appropriate alternatives is comparator-based circuits.In this paper, a modified structure for comparator-based switched-capacitor integrator is presented. This structure increases the clock frequency considerably by using a nonlinear current source. The proposed integrator involves replacing the two linear current sources in conventional comparator-based switched-capacitor integrator with just one nonlinear current source. Also, the new logic part is presented, which reduces the circuit size and power dissipation consequently. The suggested circuit reduces integration dependency to the logic part while decreases charge transfer phases to just a single phase. According to the proposed structure, a first order comparator-based switched-capacitor integrator is designed in 0.18 μm complementary metaloxide-semiconductor technology with a 100 MHz as the clock frequency.

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Dealy Time Analysis of Combined CMOS Ring Oscillator

Cited by 11 publications

References 6 publications

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Inorganic Transistors

Nonlinear current source charge scheme for comparator based switched capacitor integrator

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