The cost-efficient and plentiful Na and K resources motivate the research on ideal electrodes for sodium-ion batteries (SIBs) and potassium-ion batteries (PIBs). Here, MoSe2 nanosheets perpendicularly anchored on reduced graphene oxide (rGO) are studied as an electrode for SIBs and PIBs. Not only does the graphene network serves as a nucleation substrate for suppressing the agglomeration of MoSe2 nanosheets to eliminate the electrode fracture but also facilitates the electrochemical kinetics process and provides a buffer zone to tolerate the large strain. An expanded interplanar spacing of 7.9 Å is conducive to fast alkaline ion diffusion, and the formed chemical bondings (C–Mo and C–O–Mo) promote the structure integrity and the charge transfer kinetics. Consequently, MoSe2@5%rGO exhibits a reversible specific capacity of 458.3 mAh·g–1 at 100 mA·g–1, great cyclability with a retention of 383.6 mAh·g–1 over 50 cycles, and excellent rate capability (251.3 mAh·g–1 at 5 A·g–1) for SIBs. For PIBs, a high first specific capacity of 365.5 mAh·g–1 at 100 mA·g–1 with a low capacity fading of 51.5 mAh·g–1 upon 50 cycles and satisfactory rate property are acquired for MoSe2@10%rGO composite. Ex situ measurements validate that the discharge products are Na2Se for SIBs and K5Se3 for PIBs, and robust chemical bonds boost the structure stability for Na- and K-ion storage. The full batteries are successfully fabricated to verify the practical feasibility of MoSe2@5%rGO composite.

The isolated type of orofacial cleft, termed non-syndromic cleft lip with or without cleft palate (NSCL/P), is the second most common birth defect in China, with Asians having the highest incidence in the world. NSCL/P involves multiple genes and complex interactions between genetic and environmental factors, imposing difficulty for the genetic assessment of the unborn fetus carrying multiple NSCL/P-susceptible variants. Although genome-wide association studies (GWAS) have uncovered dozens of single nucleotide polymorphism (SNP) loci in different ethnic populations, the genetic diagnostic effectiveness of these SNPs requires further experimental validation in Chinese populations before a diagnostic panel or a predictive model covering multiple SNPs can be built. In this study, we collected blood samples from control and NSCL/P infants in Han and Uyghur Chinese populations to validate the diagnostic effectiveness of 43 candidate SNPs previously detected using GWAS. We then built predictive models with the validated SNPs using different machine learning algorithms and evaluated their prediction performance. Our results showed that logistic regression had the best performance for risk assessment according to the area under curve. Notably, defective variants in MTHFR and RBP4, two genes involved in folic acid and vitamin A biosynthesis, were found to have high contributions to NSCL/P incidence based on feature importance evaluation with logistic regression. This is consistent with the notion that folic acid and vitamin A are both essential nutritional supplements for pregnant women to reduce the risk of conceiving an NSCL/P baby. Moreover, we observed a lower predictive power in Uyghur than in Han cases, likely due to differences in genetic background between these two ethnic populations. Thus, our study highlights the urgency to generate the HapMap for Uyghur population and perform resequencing-based screening of Uyghur-specific NSCL/P markers.

The synthesis and photophysical study of two novel tert‐butyl modified cyclometalated iridium(III) complexes, i.e., bis(4‐tert‐butyl‐2‐phenylbenzothiozolato‐N,C2′) iridium(III)(acetylacetonate) [(tbt)2Ir(acac)] and bis(4‐tert‐butyl‐1‐phenyl‐1H‐benzimidazolato‐N,C2′) iridium(III)(acetylacetonate) [(tpbi)2Ir(acac)], are reported, their molecular structures were characterized by 13C NMR, 1H NMR, ESI‐MS, FT‐IR, and elementary analysis. Compared with their prototypes without tert‐butyl substituents [(bt)2Ir(acac) and (pbi)2Ir(acac)], (tbt)2Ir(acac) and (tpbi)2Ir(acac) both have shortened phosphorescent lifetimes[(tbt)2Ir(acac) versus (bt)2Ir(acac), 1.1 μs:1.8 μs; (pbi)2Ir(acac) versus (tpbi)2Ir(acac), 0.8 μs:1.82 μs]. Moreover, (tbt)2Ir(acac) has much more improved phototoluminescence quantum efficiencies in CH2Cl2 solution, [(tbt)2Ir(acac), 0.51; (bt)2Ir(acac), 0.26]. Employing them as dopants, high performance double‐layer PLEDs were fabricated. The (tbt)2Ir(acac)‐based and (tpbi)2Ir(acac)‐based PLEDs have the maximum external quantum efficiencies of 8.71 % and 10.25 %, respectively, and high EL quantum efficiencies of 5.92 % and 7.21 % can be achieved under high driven current density of 100 mA cm–2. PLEDs fabricated with both the two phosphors have much broadened EL spectra with FWHM of > 110 nm, which afford the feasibility to be used as dopants in white LEDs, and the best doping concentrations of the two complexes in fabrication of PLEDs were optimized.

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α-Ni­(OH)2 is an ideal candidate material for a supercapacitor except for its low conductivity and poor stability. In this work, BO2 –-intercalated α-Ni x Co(1–x)(OH)2 is synthesized by a hydrothermal method at a low cost. The Co dopant can decrease the charge-transfer resistance and enhance the cyclic stability. The special unsaturated electronic state of BO2 – enhances the bonding with metal ions and attracts water molecules. Thus, the BO2 – ions support the hydroxide layers as pillars and create efficient paths for proton transportation, optimizing the utilization of α-Ni­(OH)2. The three-dimensional (3D) flowerlike morphology supplies an enormous number of active sites, and r-GO is added to improve the conductivity. As a result, the modified α-Ni­(OH)2 exhibits the specific capacitance of 2179, 1592, and 1423 F·g–1 at 1, 20, and 40 A·g–1, respectively, showing improved rate performance. Matching with the commercial activated carbon (AC) as an anode, the asymmetric capacitor delivers an energy density of 40.66 W·h·kg–1 when its power density is 187.06 W·kg–1. Meanwhile, it retains 81.5% capacitance of the initial cycle at 5 A·g–1 after 3000 cycles. With conductivity enhanced and structure stabilized, the modified α-Ni­(OH)2 confronts broader fields of application.

Complementary metal-oxide-semiconductor, an elementary building block, allows for a high degree of implementation of logic circuits with relatively low power consumption and low manufacturing cost, which plays a vital role not only in current Si electronics, but also in printed flexible devices. To meet the looming challenges of the Internet of Things, p-channel thin-film transistors (TFTs) with an excellent mobility and processability have been increasingly developed using organic semiconductors. However, owing to the inherent electron-donating nature of organic compounds, the high performance of n-channel organic TFTs has yet to be demonstrated. Here, in this paper, we developed state-of-the-art solution-processed indium-zinc-oxide (IZO) TFTs with high electron mobility, sharp turn-on characteristics at 0 V, and excellent atmospheric stability and compatibility with wet patterning processes. With the damage-free lithography process in conjunction with the ultimate optimization of entire device processes, IZO-based TFT arrays were successfully fabricated via a solution process on flexible polyimide substrates. A cutoff frequency of 23 MHz in air was achieved, which is almost twice as fast as the frequency used in a near-field communication band. Furthermore, the as-fabricated IZO-based TFTs even function well under bending stress. Therefore, the current concept and technique is expected to open up opportunities to develop practical flexible devices with high-speed operation.

The large volume expansion and sluggish dynamic behavior are the key bottleneck to suppress the development of conversion-alloying dual mechanism anode for potassium-ion batteries (PIBs). Herein, Sb 2 S 3 nanorods encapsulated by reduced graphene oxide and nitrogen-doped carbon (Sb 2 S 3 @rGO@NC) are constructed as anodes for PIBs. The synergistic effect of dual physical protection and robust C-Sb chemical bonding boosts superior electrochemical kinetics and great electrode stability. Thus, Sb 2 S 3 @rGO@NC exhibits a high initial charge capacity of 505.6 mAh$g À1 at 50 mA$g À1 and a great cycle stability with the lifetime over 200 cycles at 200 mA$g À1 . Ex situ XRD, XPS, and TEM characterizations confirm that the electrode undergoes a multielectron transfer process (Sb 2 S 3 4 Sb + K 2 S 4 KSb + K 3 Sb), where K-ion insert into/extract from the material via dual mechanisms of conversion and alloying. This work sheds a light on the construction of high-performance anode materials and the understanding of K-ion storage mechanism.