De Haas‐van Alphen‐Type Oscillations in the Interband Faraday Effect of Tellurium

Lutz, M.; Bangert, E.; Mizrah, T.; Stolze, Hans H.

doi:10.1002/pssb.2220710213

Cited by 15 publications

(2 citation statements)

References 15 publications

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“…We used a similar I R spectrophotometer as described in [13] with a Sic glower as source, a grating monochromator, and a low temperature germanium bolometer. The 0.a.…”

Section: Experimental Methodsmentioning

confidence: 99%

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The Optical Activity of Tellurium

Stolze

Lutz

Große

1977

Physica Status Solidi (b)

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The optical activity (0. a.) of tellurium samples with carrier concentrations from 10'4 to 3 x x 1018 cm-3 is measured between 4 and 300 K. A comparison with the circular dichroism of the band edge shows that the 0.a. is mainly related to interband transitions near the energy gap. The experimental results are interpreted using a quantum-mechanical model, which allows a calculation of the 0.a. from the energy bands and matrix elements. The undoped samples show a characteristic temperature dependence of the 0 . a., which is caused by the temperature dependence of the energy gap. At low temperatures in degenerate samples depopulation effects in the 0.a. are observed.Es wird die optische Aktivitat (0.a.) von Tellmproben mit Locherkonzentrationen zwischen lOI4 iind 3 x lo1* bei Temperaturen von 4 bis 300 K gemessen. Ein Vergleich der 0.a. mit dem zirkularen Dichroismus der Bandkante zeigt. da13 sie vornehmlich durch Interbandiibergange nahe der Energieliicke verursacht wird. Die experimentellen Ergebnisse werden anhand eines quantenmechanischen Modells gedeutet, das die Berechnung der 0.a. aus den elektronischen Energiebandern und Matrixelementen erlaubt. Undotierte Proben zeigen einen typischen Temperaturgang der o.a., der hauptsiichlich durch die Temperaturabhangigkeit der Energieliicke bedingt ist. Bei tiefen Temperaturen und hohen Locherkonzentrationen ist das Elektronengas im oberen Valenzband entartet. Die Entleerung der oberen Valenzbandzustande fiihrt dann zu ausgepragten Besetzungseffekten in der 0.a. ~ 1) Present address: AEG-Telefunken, D-4788 Warstein 2, BRD.

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“…We used a similar I R spectrophotometer as described in [13] with a Sic glower as source, a grating monochromator, and a low temperature germanium bolometer. The 0.a.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…I n Fig. 7 the experimental data are compared with our model (equation ( 7 ) ) , which was extended by introdiicing a blocking term f E V ( k ) ( -f E , ( k + % ) ) (13) into the sum. At 4 Is: the electron gas is degenerate.…”

Section: Population Effecfs At Loic Temperaturesmentioning

confidence: 99%

The Optical Activity of Tellurium

Stolze

Lutz

Große

1977

Physica Status Solidi (b)

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Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

Metzdorf

Keßler

1982

Physica Status Solidi (b)

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The Kramers-Kronig transform of the purely absorptive real part Re (&) of the nondiagonal component of the complex dielectric tensor is applied for the first time to assign quantitatively the contributions from various individual interband transitions ( 5 4.6 eV) to the dispersive interband Faraday rotation (IFR) in Si and Ge. The data of Re (&) needed are determined from measurements of Faraday ellipticity and complex Kerr effect, respectively. I n particular, the following problems could be clarified: (i) the origin of the nonresonant change in sign of the rotation in Ge which is due to the competition mainly between negative contributions from E,, E, + A,, and Eh

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Tellurium (Te) further optical properties

Landolt-Börnstein - Group III Condensed Matter

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De Haas‐van Alphen‐Type Oscillations in the Interband Faraday Effect of Tellurium

Cited by 15 publications

References 15 publications

The Optical Activity of Tellurium

The Optical Activity of Tellurium

Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

Tellurium (Te) further optical properties

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