Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

Metzdorf, J.; Keßler, F. R.

doi:10.1002/pssb.2221090131

Physica Status Solidi (b)

1982

DOI: 10.1002/pssb.2221090131

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Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

J. Metzdorf

F. R. Keßler

Abstract: The Kramers-Kronig transform of the purely absorptive real part Re (&) of the nondiagonal component of the complex dielectric tensor is applied for the first time to assign quantitatively the contributions from various individual interband transitions ( 5 4.6 eV) to the dispersive interband Faraday rotation (IFR) in Si and Ge. The data of Re (&) needed are determined from measurements of Faraday ellipticity and complex Kerr effect, respectively. I n particular, the following problems could be clarified: (i) … Show more

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Cited by 4 publications

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Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Metzdorf

Nies

Keßler

1982

phys. stat. sol. (a)

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Differential magneto‐optical (mo) spectra in the Faraday configuration for i‐Ge (111) in the energy range of the direct interband transitions from 0.78 to 4.6 eV are presented. These spectra are obtained using linear and circular polarization modulation, respectively. Measurements of the complex mo‐Kerr effect (Kerr ellipticity and rotation) in high magnetic fields (B = 12 T; T = = 300 K) are used to calculate the off‐diagonal component \documentclass{article}\pagestyle{empty}\begin{document}$ \mathop \varepsilon \limits^\~ $\end{document} xy of the complex dielectric tensor requiring no Kramers‐Kronig transformation (KKT). Measurements of the complex Faraday effect (Faraday ellipticity and rotation) in the spectral region where the transmittance is sufficiently high, i.e., from 0.78 to 1.6 eV, yield good agreement between reflected and transmitted mo spectra. The possibility of converting both effects into each other is confirmed except for the region of discrete exciton transitions indicating dead layer effects. The KKT between the real and imaginary parts of \documentclass{article}\pagestyle{empty}\begin{document}$ \mathop \varepsilon \limits^\~ $\end{document}xy is used to provide an overall check of the dielectric response in the presence of a magnetic field. It is impossible to derive KKT's between the directly measurable quantities themselves without restrictive approximations. The consequences of different approximations on the KKT are discussed using calculated and measured data.

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Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Metzdorf

Nies

Keßler

1982

phys. stat. sol. (a)

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Compositional Variations of the Nonresonant Interband Faraday Rotation in Cd_xHg_1‐xTe Single Crystals

Koubele

Zvára

Hídek

1983

Physica Status Solidi (b)

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EYA possibility to change the wavelength of the peak photoconductivity response in Cd,Hgl -xTe (CMT) crystals within a broad spectral interval by means of alloy composition is widely used in fabrication of CMT infrared detectors. The dependence of the optical gap E on the alloy compositional parameter x and temperature T has been determined within a broad range of x values by optical absorption /1, 2/, photoconductivity /3/, and magnetoreflectance /4/. In this note we present results of interband Faraday rotation (FR) measurements at room and liquid nitrogen temperature on samples in the composition range 0.26 -I x 5 0.56. We obtain the energy gap E (x, T) as a function of x and T from comparison of the experimental results with appropriate theoretical calculations. g g Our CMT single crystals were grown in the Institute of Physics, Charles University, by a modified Bridgman method. The as-grown samples (p-types) were mechanically ground and polished to form thin plates with thickness from 50 to 500 Am. The alloy composition was determined by electron beam microprobe. F R was measured by a single beam method with polarizer oriented at an fixed angle 45' with respect to the analyzer. The rotation was calculated from the change of the transmitted beam intensity due to commutation of the external magnetic field 1 T . The infrared radiation was detected either by a PbS o r by a Golay cell and lock-in amplifier. The results were not corrected for multiple internal reflections in the sample.To our knowledge, Faraday rotation on CMT samples has been reported in the narrow spectral region covered by C02 laser lines near 1 0 p m only /5/.Different signs of F R in p-and n-type samples were observed in this spectral region.1) Ke Karlovu 5 , 121 16 Praha 2, Czechoslovakia.

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The role of intercarrier scattering in excited silicon

Grivitskas¹,

Willander²,

Vaitkus³

1984

Solid-State Electronics

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Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

Cited by 4 publications

References 20 publications

Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Compositional Variations of the Nonresonant Interband Faraday Rotation in Cd_xHg_1‐xTe Single Crystals

The role of intercarrier scattering in excited silicon

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Quantitative Analysis of the Nonresonant Interband Faraday Rotation in Ge and Si

Cited by 4 publications

References 20 publications

Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Interband faraday and kerr effects in germanium: Interrelations and dispersion relations

Compositional Variations of the Nonresonant Interband Faraday Rotation in CdxHg1‐xTe Single Crystals

The role of intercarrier scattering in excited silicon

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Product

Resources

About

Compositional Variations of the Nonresonant Interband Faraday Rotation in Cd_xHg_1‐xTe Single Crystals