The role of intercarrier scattering in excited silicon

Grivitskas, V.; Willander, Magnus; Vaitkus, J.

doi:10.1016/0038-1101(84)90188-6

Cited by 38 publications

(8 citation statements)

References 21 publications

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“…Nevertheless, the electron–hole scattering was shown to be ineffective in the ambipolar diffusion processes, as electrons and holes move in the same direction 21. However, this does not exclude influence of the hole–hole or electron–electron scattering 24. Further investigation at different carrier densities is needed to verify these speculations.…”

Section: Methodsmentioning

confidence: 99%

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

Malinauskas

Jarašiūnas

Ивакин

et al. 2010

Physica Status Solidi (a)

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We report on a contactless, all-optical study of carrier diffusion and recombination kinetics in single-crystalline diamond layers using the light-induced transient grating (LITG) technique. Decay times of transient diffraction grating yielded carrier lifetime of t R % 3 ns and bipolar diffusion coefficient D a ¼ 12 cm 2 /s at 300 K. The latter value of D a was found to be 4-5 times lower than the ambipolar diffusivity based on electron and hole mobilities, measured by photo-electrical time-of-flight (ToF) technique. This discrepancy was attributed to the bandgap renormalization at high excess carrier densities and its impact on carrier diffusion. The significant decrease of low temperature diffusivity pointed out to a contribution of many-body effects which are tentatively attributed to the formation of electron-hole liquid (EHL) at T < 150 K.

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Section: Methodsmentioning

confidence: 99%

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

Malinauskas

Jarašiūnas

Ивакин

et al. 2010

Physica Status Solidi (a)

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“…Experimental measurements of mobility at high injection levels have been performed [37,38] and empirical models based on this data have been included in device simulators [26.27]. As with any empirical model, however, these models are only valid within the range of the experimental data on which they are based.…”

Section: Carrie R-ca Rrie R Sca Tte Riizgmentioning

confidence: 99%

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Dodd

Sexton

Winokur

1994

IEEE Trans. Nucl. Sci.

106

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“…25 In contrast, the enhancement of r FCA in photo-excited samples occurs due to carrier-carrier scattering, and arises only for concentrations >2 Â 10 17 cm À3 . 4,7,19,21,27 Thus, it is not surprising that the observed enhancement in r FCA begins at approximately 10 18 cm À3 .…”

mentioning

confidence: 93%

“…It is known that r FCA increases with carrier concentrations greater than approximately 2 Â 10 17 cm À3 , 4,19 due to increased rates for carrier-carrier scattering. 20,21,27 With initial (t ¼ 0) nearsurface carrier concentrations of 2.5 Â 10 20 cm À3 and 3.5 Â 10 19 cm À3 for traces (a) and (b) in Fig. 2, respectively, this should result in an initially increased value for r FCA that decays as carriers diffuse into the bulk.…”

mentioning

confidence: 99%

“…The enhancement of r FCA in doped samples is largely due to carrier-lattice scattering and is well predicted by the change in carrier mobility. 21,25 This effect causes an enhancement in r FCA beginning at carrier concentrations of approximately 1 Â 10 16 cm À3 . 25 In contrast, the enhancement of r FCA in photo-excited samples occurs due to carrier-carrier scattering, and arises only for concentrations >2 Â 10 17 cm À3 .…”

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confidence: 99%

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Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon

Meitzner

Moore

Tillotson

et al. 2013

Applied Physics Letters

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We demonstrate an innovative pump-probe technique for the determination of free carrier absorption, diffusivity, and internal quantum efficiency in Si. The internal quantum efficiencies for excitation by 800 nm, 400 nm, and 267 nm light are found to be 1.00, 1.00, and 1.25, respectively. The free carrier absorption cross section at 1510 nm is determined to be r FCA ¼ 1.69 Â 10 À17 cm 2 and an increased value is observed for high carrier concentrations. A model for free carrier diffusion and absorption is used to extract the relationship between r FCA and carrier concentration. V C 2013 AIP Publishing LLC. [http://dx.

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The role of intercarrier scattering in excited silicon

Cited by 38 publications

References 21 publications

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon

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