DC Performance of High-Quantum-Efficiency 1.3-$\mu \hbox{m}$ GaNAsSb/GaAs Waveguide Photodetector

Abstract

We present the dc performance of a high-quantumefficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 μm. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of −16.6 V were obtained.Index Terms-Dilute nitride, GaNAsSb, responsivity, waveguide photodetector (WGPD).

High-Speed 1.3-$\mu\hbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

“…In the optical illumination condition, the total current density increases significantly due to the generation of photocurrent I ph . The corresponding responsivity (I ph /P opt ) increases from 0.32 A/W at −3 V to 0.71 A/W at −10 V under 1-mW optical power, which has been detailed in [7].…”

“…A numerical study for such WGPD structure with thin GaNAsSb absorbing layer for 1.3 μm has been discussed in [6]. The dc responsivity and quantum efficiency measurement have been detailed in [7]. This letter presents the frequency measurement results of such a GaNAsSb/GaAs/Al 0.7 Ga 0.3 As WGPD device.…”

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

“…III-V semiconductors with small amount of nitrogen (socalled dilute nitrides) such as GaNAs, GaInNAs, GaN-AsSb, or InNAs are under great interest of scientists since last decade due to their unusual physical properties [1][2][3] and potential applications in near [1,[4][5][6][7][8][9][10] and midinfrared [11][12][13][14][15] emitters, solar cells [16][17][18][19][20], and saturable absorber mirrors [21][22][23][24][25]. The most interesting feature of dilute nitrides is that the incorporation of small amount of nitrogen into III-V host causes a significant narrowing of the energy gap with the simultaneous reduction in the lattice constant [1].…”

Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

“…Nowadays, more and more microelectromechanical systems (MEMS) based on the complementary metal-oxide semiconductor (CMOS)-compatible process are developed for various applications, due to the inherent advantages of the CMOS-compatible process, including small dimensions, light weight, fast response and integrated circuits (ICs) for further signal processing [1,2]. One of the representative CMOS MEMS devices is the thermopile [3][4][5][6][7][8]. A thermopile is a set of serialy connected thermoelectric strip pairs where the Seebeck coefficient is different for materials forming the pair.…”

“…A thermopile is a set of serialy connected thermoelectric strip pairs where the Seebeck coefficient is different for materials forming the pair. Due to the Seebeck effect, thermoelectric voltage is generated linearly corresponding to the temperature difference between the hotjunction and the cold-junction of the thermopile structure [7][8][9][10].…”