High-Speed 1.3-$\mu\hbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

Abstract

The authors report the demonstration of high-speed GaNAsSb/GaAs p-i-n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4-μm-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 μm is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.Index Terms-Cutoff frequency, dilute nitride, GaNAsSb, waveguide photodetector (WGPD).