DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs

Shim, Jae Yeob; Yoon, Hyung-Sup; Kang, Dong Min; Hong, Ju; Lee, Kyung Ho

doi:10.4218/etrij.05.0105.0062

Cited by 4 publications

(4 citation statements)

References 7 publications

(6 reference statements)

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“…In the fabrication of field-effect transistor (FET)-based devices, the fine linewidth gate process, which is essential for improving high-frequency characteristics, is one of the most important process steps [4]. In this paper, we describe the key process that must be addressed in the manufacture of InAlAs/InGaAs mHEMT devices with gate lengths ranging from 0.13 μm to 0.16 μm.…”

Section: Introductionmentioning

confidence: 99%

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

et al. 2022

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We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two‐step electron‐beam lithography process using a three‐layer resist and gate recess etching process using citric acid. An electron‐beam lithography process was developed to fabricate a T‐shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three‐layered resist and two‐step electron beam exposure and development. Citric acid‐based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

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Section: Introductionmentioning

confidence: 99%

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

et al. 2022

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“…ETRI has been making efforts to develop its own semiconductor processing technology for this purpose. In concert with these efforts, we have been researching metamorphic high electron mobility transistor (mHEMT) technology for many years and have achieved the development of mHEMT technology with 0.15-μm length, and published the performance verification of a 77 GHz monolithic microwave integrated circuit (MMIC) using the developed technology [3,4]. This paper is intended to report on the results of the subsequent research, the development of mHEMT technology with 0.1-μm gate length, and the performance verification of a 94 GHz MMIC using the developed technology.…”

Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.

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“…This high aspect ratio provides a significant reduction of gate resistance. Thus, this low noise performance is attributed to the marked reduction in gate resistance by the T-gate with a wide head 5) and the improved device performance. 11) Finally, an LNA MMIC was designed and fabricated using the 0:15 Â 100 mm 2 power MHEMT device.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, MHEMTs are becoming important devices in microwave monolithic integrated circuits (MIMICs) for high-power and low-noise applications. [3][4][5][6] In addition, as a one-chip transceiver consisting of a transmitter and a receiver can be readily applicable for system integration, the MHEMTs would be particularly valuable when the epitaxial structures are adequately engineered so that the transceivers can be fabricated on a wafer. Here, we adopt a power MHEMT with a doubledoped structure to realize a transceiver MMIC on a wafer for an automotive radar system application.…”

Section: Introductionmentioning

confidence: 99%

Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

Shim¹,

Yoon²,

Kang³

et al. 2006

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The DC and RF characteristics of a 0.15 µm GaAs power metamorphic high electron mobility transistor (MHEMT) have been investigated and consequently, 77-GHz-band-low-noise-amplifier (LNA) millimeter-wave monolithic integrated circuits (MMICs) were fabricated using the 0.15 µm power MHEMT device. The 0.15 ×100 µm2 MHEMT device showed a drain saturation current of 40.4 mA/mm, an extrinsic transconductance of 857 mS/mm, and a threshold voltage of -0.64 V. For the distributions of DC characteristics across a 100 mm wafer, the standard deviation of the threshold voltage and the maximum extrinsic transconductance were -0.64 ±0.03 V and 810 ±25 mS/mm, respectively. The obtained cutoff frequency and maximum frequency of oscillation were 141 and 243 GHz, respectively. The 8 ×50 µm2 MHEMT device showed a 33.2% PAE, an 18.1 dB power gain, and a 50.1 mW output power at 5.8 GHz. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz were obtained for the 0.15 ×100 µm2 MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the marked reduction of gate resistance by the T-shaped gate with a wide head and the improved device performance. The fabricated LNA MMIC using a 0.15 ×100 µm2 MHEMT device exhibited a small signal gain of 20 dB and a noise figure of 5.5 dB at a frequency range of 76 to 77 GHz.

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DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs

Cited by 4 publications

References 7 publications

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

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